Amorphous-to-crystalline transition in Ge22Se78−x Bi x system

Il Nuovo Cimento D - Tập 18 - Trang 587-594 - 1996
S. K. Agrahari1, P. K. Dwivedi1, R. Arora1, A. Kumar1
1Department of Physics, Harcourt Butler Technological Institute, Kanpur, India

Tóm tắt

Crystallization kinetics is studied in glassy Ge22Se78−x Bi x (0≤x≤10) using isothermal annealing at various temperatures between the glass transition and melting. D.c. conductivity is taken as a parameter to estimate the extent of crystallization (α). The activation energy of crystallization (ΔE) and the order parameter (n) are calculated by fitting the values of α in Avrami’s equations of isothermal transformation. The results indicate that ΔE is highly composition dependent and decreases as the Bi concentration increases.

Tài liệu tham khảo

Mahadevan S., Giridhar A. andSingh A. K.,J. Non-Cryst. Solids,88 (1986) 11. Kissinger H. G.,Anal. Chem.,29 (1957) 1702. Rysava N., Spasov T. andTichy L.,J. Therm. Anal.,32 (1987) 1015. Yinnon H. andUhlmann D. R.,J. Non-Cryst. Solids,54 (1983) 253. Moharram A. H.,Phys. Status Solidi A,129 (1992) 81. Hamou A., Saiter J. M., Bayard J., Grenet J. andVantier C.,Mater. Lett.,12 (1992) 442. Morii K., Wanka S. andNakayama Y.,Mater. Sci. Eng. B,1375 (1992) 126. Ligero R. A., Casas-Ruiz M., Vazquenz J. andJimenez-Garay R.,Phys. Chem. Glasses,34 (1993) 12. Bhargava A. andJain I. P.,Mater. Sci. Res. Lab., J. Phys. D.,27 (1994) 830. Blatter A. andOrtiz C.,J. Cryst. Growth,139 (1994) 1208. Avrami M.,J. Chem. Phys.,8 (1940) 212. Odelevsky V. I.,J. Tech. Phys.,21 (1951) 673. El-Mously M. I. andBorisova Z. U.,Bull. Acad. Sci. USSR (Inorg. Mater.),3 (1967) 923. Kotkata M. F., Al-Dib A. F. andGani F. A.,Mater. Sci. Eng.,72 (1985) 163. Tohge N., Minami T., Yamamoto Y. andTanaka M.,J. Appl. Phys.,51 (1980) 1048.