All-optical modulation based on MoS2-Plasmonic nanoslit hybrid structures

Nanophotonics - Tập 10 Số 16 - Trang 3957-3965 - 2021
Feiying Sun1, Changbin Nie2, Xingzhan Wei2, Mao Hu3, Yupeng Zhang1, Guo Ping Wang1
1Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People’s Republic of China
2Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing , 400714 , People’s Republic of China
3Guangdong Hongxin Technology Co. Ltd. , Dongguan , 523690 , People’s Republic of China

Tóm tắt

Abstract Two-dimensional (2D) materials with excellent optical properties and complementary metal-oxide-semiconductor (CMOS) compatibility have promising application prospects for developing highly efficient, small-scale all-optical modulators. However, due to the weak nonlinear light-material interaction, high power density and large contact area are usually required, resulting in low light modulation efficiency. In addition, the use of such large-band-gap materials limits the modulation wavelength. In this study, we propose an all-optical modulator integrated Si waveguide and single-layer MoS2 with a plasmonic nanoslit, wherein modulation and signal light beams are converted into plasmon through nanoslit confinement and together are strongly coupled to 2D MoS2. This enables MoS2 to absorb signal light with photon energies less than the bandgap, thereby achieving high-efficiency amplitude modulation at 1550 nm. As a result, the modulation efficiency of the device is up to 0.41 dB μm−1, and the effective size is only 9.7 µm. Compared with other 2D material-based all-optical modulators, this fabricated device exhibits excellent light modulation efficiency with a micron-level size, which is potential in small-scale optical modulators and chip-integration applications. Moreover, the MoS2-plasmonic nanoslit modulator also provides an opportunity for TMDs in the application of infrared optoelectronics.

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Tài liệu tham khảo

J. Ahn, M. Fiorentino, R. G. Beausoleil, N. Binkert, A. Davis, and D. Fattal, “Devices and architectures for photonic chip-scale integration,” Appl. Phys. A, vol. 95, p. 989, 2009, https://doi.org/10.1007/s00339-009-5109-2.

R. Soref, “The past, present, and future of silicon photonics,” IEEE J. Sel. Top. Quant. Electron., vol. 12, p. 1678, 2006, https://doi.org/10.1109/jstqe.2006.883151.

H. T. Lin, Z. Q. Luo, T. Gu, et al.., “Mid-infrared integrated photonics on silicon: a perspective,” Nanophotonics, vol. 7, p. 393, 2017, https://doi.org/10.1515/nanoph-2017-0085.

T. K. Liang, L. R. Nunes, T. Sakamoto, K. Sasagawa, T. Kawanishi, and M. Tsuchiya, “Ultrafast all-optical switching by cross-absorption modulation in silicon wire waveguides,” Opt. Express, vol. 13, p. 7298, 2005, https://doi.org/10.1364/opex.13.007298.

A. Martínez, J. Blasco, P. Sanchis, J. Galán, J. G. Rupérez, and E. Jordana, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett., vol. 10, p. 1506, 2010, https://doi.org/10.1021/nl9041017.

H. K. Tsang, C. S. Wong, T. K. Liang, et al.., “Optical dispersion, two-photon absorption and self-phase modulation in silicon waveguides at 1.5 μm wavelength,” Appl. Phys. Lett., vol. 80, p. 416, 2002, https://doi.org/10.1063/1.1435801.

G. Singh, R. P. Yadav, and V. Janyani, “Ti indiffused Lithium Niobate (Ti: LiNbO3) Mach-Zehnder interferometer all optical switches: a review,” in New Advanced Technologies, A. Lazinica, Ed., London, United Kingdom, IntechOpen, 2010.

P. Boucaud, P. Vagos, F. H. Julien, and J. M. Lourtioz, “Modulation bandwidth enhancement of all-optical modulators based on photo-induced intersub-band absorption in GaAs/AlGaAs quantum wells by proton bombardment,” Electron. Lett., vol. 28, p. 1373, 1992, https://doi.org/10.1049/el:19920873.

K. S. Novoselov, V. I. Fal′ko, L. Colombo, P. R. Gellert, M. G. Schwab, and K. Kim, “A roadmap for graphene,” Nature, vol. 490, p. 192, 2012, https://doi.org/10.1038/nature11458.

S. Z. Butler, S. M. Hollen, L. Y. Cao, Y. Cui, J. A. Gupta, and H. R. Gutiérrez, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano, vol. 7, p. 2898, 2013, https://doi.org/10.1021/nn400280c.

N. R. Rao, A. K. Sood, K. S. Subrahmanyam, and A. Govindaraj, “Graphene: the new two-dimensional nanomaterial,” Angew. Chem. Int. Ed., vol. 48, p. 7752, 2009, https://doi.org/10.1002/anie.200901678.

Y. H. Yao, Z. Cheng, J. J. Dong, and X. L. Zhang, “Performance of integrated optical switches based on 2D materials and beyond,” Front. Optoelectron., vol. 13, p. 129, 2020, https://doi.org/10.1007/s12200-020-1058-3.

C. Y. Zhong, J. Y. Li, and H. T. Lin, “Graphene-based all-optical modulators,” Front. Optoelectron., vol. 13, p. 114, 2020, https://doi.org/10.1007/s12200-020-1020-4.

W. Li, B. G. Chen, C. Meng, W. Fang, and Y. Xiao, “Ultrafast all-optical graphene modulator,” Nano Lett., vol. 14, p. 955, 2014, https://doi.org/10.1021/nl404356t.

J. H. Chen, B. C. Zheng, G. H. Shao, S. J. Ge, F. Xu, and Y. Q. Lu, “An all-optical modulator based on a stereo graphene-microfiber structure,” Light Sci. Appl., vol. 4, p. e360, 2015, https://doi.org/10.1038/lsa.2015.133.

F. Y. Sun, L. P. Xia, C. B. Nie, J. Shen, and Y. X. Zou, “The all-optical modulator in dielectric-loaded waveguide with graphene-silicon heterojunction structure,” Nanotechnology, vol. 29, p. 135201, 2018, https://doi.org/10.1088/1361-6528/aaa8be.

H. Wang, N. Yang, L. M. Chang, C. B. Zhou, S. Y. Li, and M. Deng, “CMOS-compatible all-optical modulator based on the saturable absorption of graphene,” Photonics Res., vol. 8, p. 468, 2020, https://doi.org/10.1364/prj.380170.

M. Al Aloul and M. Rasras, “Low insertion loss plasmon-enhanced graphene all-optical modulator,” ACS Omega, vol. 6, p. 7576, 2021.

H. J. Zhang, N. Healy, L. Shen, C. C. Huang, D. W. Hewak, and A. C. Peacock, “Enhanced all-optical modulation in a graphene-coated fibre with low insertion loss,” Sci. Rep., vol. 6, p. 1, 2016, https://doi.org/10.1038/srep23512.

H. A. Li, Z. J. Huang, Y. W. Lang, X. L. Wang, H. Zhu, and Z. R. Shen, “Broadband all-light-control with WS2 coated microfibers,” Opt. Express, vol. 27, p. 12817, 2019, https://doi.org/10.1364/oe.27.012817.

S. Yang, D. C. Liu, Z. L. Tan, K. Liu, Z. H. Zhu, and S. Q. Qin, “CMOS-compatible WS2-based all-optical modulator,” ACS Photonics, vol. 5, p. 342, 2018, https://doi.org/10.1021/acsphotonics.7b01206.

N. N. Dong, Y. X. Li, S. F. Zhang, X. Y. Zhang, and J. Wang, “Optically induced transparency and extinction in dispersed MoS2, MoSe2, and graphene nanosheets,” Adv. Opt. Mater., vol. 5, p. 1700543, 2017, https://doi.org/10.1002/adom.201700543.

M. Liu, Z. W. Wei, A. P. Luo, W. C. Xu, and Z. C. Luo, “Recent progress on applications of 2D material-decorated microfiber photonic devices in pulse shaping and all-optical signal processing,” Nanophotonics, vol. 9, p. 2641, 2020, https://doi.org/10.1515/nanoph-2019-0564.

Y. Z. Wang, F. Zhang, X. Tang, et al.., “All-optical phosphorene phase modulator with enhanced stability under ambient conditions,” Laser Photonics Rev., vol. 12, p. 1800016, 2018, https://doi.org/10.1002/lpor.201800016.

J. L. Zheng, X. Tang, Z. H. Yang, Z. M. Liang, and Y. X. Chen, “Few-Layer phosphorene-decorated microfiber for all-optical thresholding and optical modulation,” Adv. Opt. Mater., vol. 5, p. 1700026, 2017, https://doi.org/10.1002/adom.201700026.

K. P. Wang, Y. Y. Feng, C. X. Chang, J. X. Zhan, C. W. Wang, and Q. Z. Zhao, “Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors,” Nanoscale, vol. 6, p. 10530, 2014, https://doi.org/10.1039/c4nr02634a.

J. D. Marini, F. J. Cox, and G. de Abajo, “Theory of graphene saturable absorption,” Phys. Rev. B, vol. 95, p. 125408, 2017, https://doi.org/10.1103/physrevb.95.125408.

Z. Sun, A. Martinez, and F. Wang, “Optical modulators with 2D layered materials,” Nat. Photonics, vol. 10, p. 227, 2016, https://doi.org/10.1038/nphoton.2016.15.

P. G. Yan, A. J. Liu, Y. S. Chen, H. Chen, S. C. Ruan, and C. Y. Guo, “Microfiber-based WS2-film saturable absorber for ultra-fast photonics,” Opt. Mater. Express, vol. 5, p. 479, 2015, https://doi.org/10.1364/ome.5.000479.

H. Y. G. Zhang, W. G. Zhu, J. H. Yu, H. H. Lu, W. T. Qiu, and J. L. Dong, “All light-control-light properties of molybdenum diselenide (MoSe2)-coated-microfiber,” Opt. Express, vol. 25, p. 28536, 2017, https://doi.org/10.1364/oe.25.028536.

A. Phatak, Z. Cheng, and C. Qin, “Design of electro-optic modulators based on graphene-on-silicon slot waveguides,” Opt. Lett., vol. 41, p. 2501, 2016, https://doi.org/10.1364/ol.41.002501.

Z. Lu and W. Zhao, “Nanoscale electro-optic modulators based on graphene-slot waveguides,” JOSA B, vol. 29, p. 1490, 2012, https://doi.org/10.1364/josab.29.001490.

C. Huck, J. Vogt, and M. Sendner, “Plasmonic enhancement of infrared vibrational signals: nanoslits versus nanorods,” ACS Photonics, vol. 2, p. 1489, 2015, https://doi.org/10.1021/acsphotonics.5b00390.

F. Y. Sun, L. P. Xia, C. B. Nie et al.., “An all-optical modulator based on a graphene–plasmonic slot waveguide at 1550 nm,” Appl. Phys. Express, vol. 12, p. 042009, 2019, https://doi.org/10.7567/1882-0786/ab0a89.

D. Pacifici, H. J. Lezec, and H. A. Atwater, “All-optical modulation by plasmonic excitation of CdSe quantum dots,” Nat. Photonics, vol. 1, p. 402, 2007, https://doi.org/10.1038/nphoton.2007.95.

V. I. Klimov, C. J. Schwarz, and D. W. McBranch, “Ultrafast dynamics of inter-and intraband transitions in semiconductor nanocrystals: implications for quantum-dot lasers,” Phys. Rev. B, vol. 60, p. R2177, 1999, https://doi.org/10.1103/physrevb.60.r2177.

X. C. Shen, Semiconductor Spectroscopy and Optical Properties, Beijing, China, Scientific, 2002.

Z. Z. Ma, K. Kikunaga, H. Wang, and S. Sun, “Compact graphene plasmonic slot photodetector on silicon-on-insulator with high responsivity,” ACS Photonics, vol. 7, p. 932, 2020, https://doi.org/10.1021/acsphotonics.9b01452.

S. A. Maier, Plasmonics: Fundamentals and Applications, New York, USA, Springer Science & Business Media, 2007.

W. Chen, J. Zhao, J. Zhang, et al.., “Oxygen-assisted chemical vapor deposition growth of large single-crystal and high-quality monolayer MoS2,” J. Am. Chem. Soc., vol. 137, p. 15632, 2015, https://doi.org/10.1021/jacs.5b10519.

P. F. Yang, X. L. Zou, Z. P. Zhang, et al.., “Batch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass,” Nat. Commun., vol. 9, p. 1, 2018, https://doi.org/10.1038/s41467-018-03388-5.

M. Tamulewicz, J. K. Girzycka, K. Gajewski, J. Serafińczuk, and A. Sierakowski, “Layer number dependence of the work function and optical properties of single and few layers MoS2: effect of substrate,” Nanotechnology, vol. 30, p. 245708, 2019, https://doi.org/10.1088/1361-6528/ab0caf.

K. F. Mak, C. G. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett., vol. 105, p. 136805, 2010, https://doi.org/10.1103/physrevlett.105.136805.

N. Kaushik, A. Nipane, and F. Basheer, “Schottky barrier heights for Au and Pd contacts to MoS2,” Appl. Phys. Lett., vol. 105, p. 113505, 2014, https://doi.org/10.1063/1.4895767.

Y. Katagiri, T. Nakamura, and A. Ishii, “Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam,” Nano Lett., vol. 16, p. 3788, 2016, https://doi.org/10.1021/acs.nanolett.6b01186.

X. Liu, F. Li, and M. Xu, “High response, self-powered photodetector based on the monolayer MoS2/P–Si heterojunction with asymmetric electrodes,” Langmuir, vol. 34, p. 14151, 2018, https://doi.org/10.1021/acs.langmuir.8b02171.

M. Kumar, M. Patel, and H. S. Kim, “High-speed, self-biased broadband photodetector-based on a solution-processed Ag nanowire/Si Schottky junction,” ACS Appl. Mater. Interfaces, vol. 9, p. 38824, 2017, https://doi.org/10.1021/acsami.7b14250.

J. Li and D. Chu, “Energy band engineering of metal oxided for enhanced visible light absorption,” in Multifunctional photocatalytic materials for energy, Z. Lin, M. Ye, and M. Wang, Eds., Netherlands, Elsevier, 2018, pp. 49–78.

Y. Liu, J. Guo, and E. Zhu, “Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions,” Nature, vol. 557, p. 696, 2018, https://doi.org/10.1038/s41586-018-0129-8.

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Nanophotonics

Tập 10 Số 16

3957-3965

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