AlGaInP-sapphire glue bonded light-emitting diodes

IEEE Journal of Quantum Electronics - Tập 38 Số 10 - Trang 1390-1394 - 2002
Shoou-Jinn Chang1, Yan-Kuin Su1, T. Yang2, Chih-Sung Chang2, Tzer-Peng Chen2, Kuo-Hsin Huang2
1The Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
2The Department of Research and Development, United Epitaxy Company Limited, Hsinchu, Taiwan

Tóm tắt

A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test.

Từ khóa

#Light emitting diodes #Substrates #Gallium arsenide #Quantum well devices #Wafer bonding #Photonic band gap #Distributed Bragg reflectors #MOCVD #Wet etching #Voltage

Tài liệu tham khảo

Thông tin
Thông tin xuất bản

IEEE Journal of Quantum Electronics

Tập 38 Số 10

1390-1394

Thông tin tác giả