Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

Huong Thi Thanh Nguyen1, Nagarajan Balaji2, Cheolmin Park2, Nguyen Minh Triet3, Anh Huy Tuan Le1, Seunghwan Lee1, Minhan Jeon1, Donhyun Oh4, Vinh Ai Dao1, Junsin Yi1
1School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea
2Department of Energy Science, Sungkyunkwan University, Suwon, 440-746, Korea
3School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Korea
4Department of Energy System, Sungkyunkwan University, Suwon 440-746, Korea

Tóm tắt

Từ khóa


Tài liệu tham khảo

citation_title=Crystalline Silicon Solar Cells; citation_author=Goetzberger A; citation_author=Knobloch J; citation_author=Voss B; citation_publisher=John Wiley and Sons; citation_publication_date=1998; citation_journal_title=Prog. Photovolt., Res. Appl.; citation_title=Surface passivation of crystalline silicon solar cells: a review; citation_author=Aberle A G; citation_volume=8; citation_publication_date=2000; citation_firstpage=473; citation_doi=10.1002/1099-159X(200009/10)8:5<473::AID-PIP337>3.0.CO;2-D; citation_journal_title=Sol. Energy Mater. Sol. Cells; citation_title=Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge; citation_author=Agostinelli G; citation_author=Delabie A; citation_author=Vitanov P; citation_author=Alexieva Z; citation_author=Dekkers H F W; citation_author=DeWolf S; citation_author=Beaucarne G; citation_volume=90; citation_publication_date=2006; citation_firstpage=3438; citation_doi=10.1016/j.solmat.2006.04.014; citation_journal_title=J. Appl. Phys.; citation_title=Silicon surface passivation by atomic layer deposited Al2O3; citation_author=Hoex B; citation_author=Schmidt J; citation_author=Pohl P; citation_author=van de Sanden M C M; citation_author=Kessels W M M; citation_volume=104; citation_publication_date=2008; citation_firstpage=044903; citation_doi=10.1063/1.2963707; citation_journal_title=Electrochem. Solid-State Lett.; citation_title=Influence of the deposition temperature on the c-Si surface passivation by Al2O3 films synthesized by ALD and PECVD; citation_author=Dingemans G; citation_author=van de Sanden M C M; citation_author=Kessels W M M; citation_volume=13; citation_publication_date=2010; citation_firstpage=76; citation_doi=10.1149/1.3276040; citation_journal_title=Appl. Phys. Express.; citation_title=High quality aluminum oxide passivation layer for crystalline silicon solar cells deposited by parallel-plate plasma-enhanced chemical vapor deposition; citation_author=Miyajima S; citation_author=Irikawa J; citation_author=Yamada A; citation_author=Konagai M; citation_volume=3; citation_publication_date=2010; citation_firstpage=012301; citation_doi=10.1143/APEX.3.012301; citation_journal_title=J. Appl. Phys.; citation_title=Electronic and chemical properties of the c-Si/Al2O3 interface; citation_author=Werner F; citation_author=Veith B; citation_author=Zielke D; citation_author=Kühnemund L; citation_author=Tegenkamp C; citation_author=Seibt M; citation_author=Brendel R; citation_author=Schmidt J; citation_volume=109; citation_publication_date=2011; citation_firstpage=113701; citation_doi=10.1063/1.3587227; citation_journal_title=J. Vacuum Sci. Technol. A; citation_title=Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells; citation_author=Dingemansand G; citation_author=Kessels W M M; citation_volume=30; citation_publication_date=2012; citation_firstpage=040802; citation_doi=10.1116/1.4728205; citation_journal_title=Appl. Phys. Lett.; citation_title=Exellent passivation of highly doped p-type Si surfaces by the negative charge dielectric Al2O3; citation_author=Hoex B; citation_author=Schmidt J; citation_author=Bock R; citation_author=Altermatt P P; citation_author=van de Sanden M C M; citation_author=Kessels W M M; citation_volume=91; citation_publication_date=2007; citation_firstpage=112107; citation_doi=10.1063/1.2784168; citation_journal_title=Appl. Phys. Lett.; citation_title=High efficiency n-type Si solar cells on Al2O3 passivated boron emitters; citation_author=Benick J; citation_author=Hoex B; citation_author=van de Sanden M C M; citation_author=Kessels W M M; citation_author=Schultz O; citation_author=Glunz S; citation_volume=92; citation_publication_date=2008; citation_firstpage=253504; citation_doi=10.1063/1.2945287; citation_journal_title=Beilstein J. Nanotechnol.; citation_title=Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates; citation_author=López G; citation_author=Ortega P R; citation_author=Voz C; citation_author=Martín I; citation_author=Colina M; citation_author=Morales A B; citation_author=Orpella A; citation_author=Alcubilla R; citation_volume=4; citation_publication_date=2013; citation_firstpage=726; citation_doi=10.3762/bjnano.4.82; citation_journal_title=J. Appl. Phys.; citation_title=Al2O3/TiO2 stack layers for effective surface passivation of crystalline silicon; citation_author=Suh D; citation_author=Choi D; citation_author=Weber K J; citation_volume=114; citation_publication_date=2013; citation_firstpage=154107; citation_doi=10.1063/1.4825258; citation_journal_title=J. Semicond.; citation_title=Optimization of Al2O3/SiNx stacked antireflection structures for n-type surface-passivated crystalline silicon solar cells; citation_author=Dawei W; citation_author=Rui J; citation_author=Wuchang D; citation_author=Chen C; citation_author=Deqi W; citation_author=Wei C; citation_author=Haofeng L; citation_author=Huihui Y; citation_author=Xinyu L; citation_volume=32; citation_publication_date=2011; citation_firstpage=094008; citation_doi=10.1088/1674-4926/32/9/094008; citation_journal_title=Appl. Phys. Lett.; citation_title=Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation; citation_author=Schuldis D; citation_author=Richter A; citation_author=Benick J; citation_author=Saint-Cast P; citation_author=Hermle M; citation_author=Glunz S W; citation_volume=105; citation_publication_date=2014; citation_firstpage=231601; citation_doi=10.1063/1.4903483; citation_journal_title=IEEE Trans. Electron Devices; citation_title=Industrially feasible rear passivation and contacting scheme for high-efficiency n-type solar cells yielding a Voc of 700 mV; citation_author=Suwito D; citation_author=Jäger U; citation_author=Benick J; citation_author=Janz S; citation_author=Hermle M; citation_author=Glunz S W; citation_volume=57; citation_publication_date=2010; citation_firstpage=2032; citation_doi=10.1109/TED.2010.2051194; citation_journal_title=Phys. Status Solidi (RRL); citation_title=Contact passivation in silicon solar cells using atomic-layer-deposited aluminum oxide layers; citation_author=Zielke D; citation_author=Petermann J H; citation_author=Werner F; citation_author=Veith B; citation_author=Brendel R; citation_author=Schmidt J; citation_volume=5; citation_publication_date=2011; citation_firstpage=298; citation_doi=10.1002/pssr.201105285; citation_journal_title=IEEE J. Photovoltaics; citation_title=Boron emitter passivation with Al2O3 and Al2O3/SiNx stacks using ALD Al2O3; citation_author=Richter A; citation_author=Benick J; citation_author=Hermle M; citation_volume=3; citation_publication_date=2013; citation_firstpage=236; citation_doi=10.1109/JPHOTOV.2012.2226145; citation_journal_title=Energy Procedia; citation_title=Optimised antireflection coatings using silicon nitride on textured silicon surfaces based on measurements and multidimensional modelling; citation_author=Duttagupta S; citation_author=Ma F; citation_author=Hoex B; citation_author=Mueller T; citation_author=Aberle A G; citation_volume=15; citation_publication_date=2012; citation_firstpage=78; citation_doi=10.1016/j.egypro.2012.02.009; citation_journal_title=Appl. Phys. Lett.; citation_title=Gap states in silicon nitride; citation_author=Robertson J; citation_author=Powell M J; citation_volume=44; citation_publication_date=1984; citation_firstpage=415; citation_doi=10.1063/1.94794; citation_journal_title=J. Electrochem. Soc.; citation_title=Dangling bonds in memory-quality silicon nitride films; citation_author=Fujita S; citation_author=Sasaki A; citation_volume=132; citation_publication_date=1985; citation_firstpage=398; citation_doi=10.1149/1.2113850; citation_title=Stability of low refractive index PECVD silicon oxynitride layers; citation_conference_title=Proc. Symp. IEEE/LEOS Benelux; citation_author=Hussein M G; citation_author=Wörhoff K; citation_author=Sengo G; citation_author=Driessen A; citation_publication_date=2003; citation_journal_title=J. Nanosci. Nanotechnol.; citation_title=Advances in surface passivation schemes for high efficiency c-silicon solar cells; citation_author=Balaji N; citation_author=Park C; citation_author=Lee S; citation_author=Lee Y; citation_author=Yi J; citation_volume=16; citation_publication_date=2016; citation_firstpage=1533; citation_doi=10.1166/jnn.2016.13214; citation_journal_title=J. Korean Phys. Soc.; citation_title=Effects of plasma-enhanced chemical vapor deposition (PECVD) on the carrier lifetime of Al2O3 passivation stack; citation_author=Cho K; citation_author=Cho Y; citation_author=Chang H; citation_volume=67; citation_publication_date=2015; citation_firstpage=995; citation_doi=10.3938/jkps.67.995; citation_journal_title=Vacuum; citation_title=Rear-side passivation characteristics of Si-rich SiNx for various local back contact solar cells; citation_author=Balaji N; citation_author=Park C; citation_author=Lee Y; citation_author=Jung S; citation_author=Yi J; citation_volume=96; citation_publication_date=2013; citation_firstpage=69; citation_doi=10.1016/j.vacuum.2013.03.011; citation_journal_title=Sol. Energy Mater. Sol. Cells; citation_title=Study on hydrogenated silicon nitride for application of high efficiency crystalline silicon solar cells; citation_author=Yoo J; citation_author=So J; citation_author=Yu G; citation_author=Yi J; citation_volume=95; citation_publication_date=2011; citation_firstpage=7; citation_doi=10.1016/j.solmat.2010.03.031; citation_journal_title=Sol. Energy Mater. Sol. Cells; citation_title=Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon; citation_author=Lelievre J F; citation_author=Fourmond E; citation_author=Kaminski A; citation_author=Palais O; citation_author=Ballutaud D; citation_author=Lemiti M; citation_volume=93; citation_publication_date=2009; citation_firstpage=1281; citation_doi=10.1016/j.solmat.2009.01.023; citation_journal_title=Solid State Electron.; citation_title=An investigation of surface states at a silicon/silicon oxide interface employing metal–oxide–silicon diodes; citation_author=Terman L M; citation_volume=5; citation_publication_date=1962; citation_firstpage=285; citation_doi=10.1016/0038-1101(62)90111-9; citation_title=MOS (Metal Oxide Semiconductor) Physics and Technology; citation_author=Nicollian E H; citation_author=Brews J R; citation_publisher=Wiley; citation_publication_date=1982; citation_journal_title=J. Appl. Phys.; citation_title=Plasma-enhanced growth, composition, and refractive index of silicon oxynitride films; citation_author=Mattsson K E; citation_volume=77; citation_publication_date=1995; citation_firstpage=6616; citation_doi=10.1063/1.359072; citation_journal_title=Thin Solid Films; citation_title=On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films; citation_author=Alayo M I; citation_author=Pereyra I; citation_author=Scopel W L; citation_author=Fantini M C A; citation_volume=402; citation_publication_date=2002; citation_firstpage=154; citation_doi=10.1016/S0040-6090(01)01685-6; citation_journal_title=Phys. Rev. B: Condens. Matter Mater. Phys.; citation_title=Configurational statistics in a-SixNyHz alloys: A quatitative bonding analysis; citation_author=Bustarret E; citation_author=Bensouda M; citation_author=Habrard M C; citation_author=Bruyère J C; citation_author=Poulin S; citation_author=Gujrathi S C; citation_volume=38; citation_publication_date=1988; citation_firstpage=8171; citation_doi=10.1103/PhysRevB.38.8171; citation_journal_title=Thin Solid Films; citation_title=Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition; citation_author=Dupuis J; citation_author=Fourmond E; citation_author=Ballutaud D; citation_author=Bererd N; citation_author=Lemiti M; citation_volume=519; citation_publication_date=2010; citation_firstpage=1325; citation_doi=10.1016/j.tsf.2010.09.036; citation_author=Darwent B deB; citation_publication_date=1970; citation_journal_title=Opt. Mater.; citation_title=Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides; citation_author=Ay F; citation_author=Aydinli A; citation_volume=26; citation_publication_date=2004; citation_firstpage=33; citation_doi=10.1016/j.optmat.2003.12.004; citation_journal_title=Phil. Mag. B; citation_title=Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition; citation_author=Giorgis F; citation_author=Giuliana F; citation_author=Pirri C F; citation_author=Tresso E; citation_author=Summonte C; citation_author=Rizzoli R; citation_author=Galloni F; citation_author=Desalvo A; citation_author=Rava P; citation_volume=77; citation_publication_date=1998; citation_firstpage=925; citation_doi=10.1080/13642819808206395; citation_journal_title=J. Non Crystal. Solids; citation_title=Quantitative infrared characterization of plasma enhanced CVD silicon oxynitride films; citation_author=Rostaing J C; citation_author=Cros Y; citation_author=Gujrathi S C; citation_author=Poulain S; citation_volume=97; citation_publication_date=1987; citation_firstpage=1051; citation_doi=10.1016/0022-3093(87)90252-3; citation_journal_title=Appl. Phys. Lett.; citation_title=Infrared absorption study of N–H bonds in plasma‐deposited silicon oxynitride films; citation_author=Denisse C M M; citation_author=Janssen J F M; citation_author=Habraken F H P M; citation_author=van der Weg W F; citation_volume=52; citation_publication_date=1988; citation_firstpage=1308; citation_doi=10.1063/1.99682; citation_journal_title=Sol. Energy Mater. Sol. Cells; citation_title=Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers; citation_author=Hallam B; citation_author=Tjahjono B; citation_author=Wenham S; citation_volume=96; citation_publication_date=2012; citation_firstpage=173; citation_doi=10.1016/j.solmat.2011.09.052; citation_journal_title=Thin Solid Films; citation_title=Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications; citation_author=Hussein M G; citation_author=Wörhoff K; citation_author=Sengo G; citation_author=Driessen A; citation_volume=515; citation_publication_date=2007; citation_firstpage=3779; citation_doi=10.1016/j.tsf.2006.09.046; citation_title=Crystalline Silicon Solar Cells: Advanced Surface Passivation and Analysis; citation_author=Aberle A G; citation_publisher=University of New South Wales, Centre for Photovoltaic Engineering; citation_publication_date=1999; citation_journal_title=Philos. Mag. B; citation_title=Defects and hydrogen in amorphous silicon nitride; citation_author=Robertson J; citation_volume=69; citation_publication_date=1994; citation_firstpage=307; citation_doi=10.1080/01418639408240111; citation_journal_title=Phys. Status Solidi A; citation_title=The role of hydrogen atoms (H atoms) in metastable defect formation at Si-SiO2 interfaces and in hydrogenated amorphous Si (a-Si:H); citation_author=Lucovsky G; citation_author=Yang H Y; citation_author=Jing Z; citation_author=Whitten J L; citation_volume=159; citation_publication_date=1997; citation_firstpage=5; citation_doi=10.1002/1521-396X(199701)159:1<5::AID-PSSA5>3.0.CO;2-L; citation_journal_title=Appl. Surf. Sci.; citation_title=Hydrogen atom participation in metastable defect formation at Si/SiO2 interfaces; citation_author=Lucovsky G; citation_author=Yang H; citation_author=Jing Z; citation_author=Whitten J L; citation_volume=192; citation_publication_date=1997; citation_firstpage=117; citation_doi=10.1016/S0169-4332(97)80077-3; citation_journal_title=Appl. Phys. Lett.; citation_title=Investigation of the light-induced effects in nitrogen-rich silicon nitride films; citation_author=Jousse D; citation_author=Kanicki J; citation_volume=55; citation_publication_date=1989; citation_firstpage=1112; citation_doi=10.1063/1.101673; citation_journal_title=J. Appl. Phys.; citation_title=Detailed study of the composition of hydrogenated SiNx layers for high-quality silicon surface passivation; citation_author=Mäckel H; citation_author=Lüdemann R; citation_volume=92; citation_publication_date=2002; citation_firstpage=2602; citation_doi=10.1063/1.1495529; citation_journal_title=Appl. Phys. Lett.; citation_title=Excess silicon at the Si3N4/SiO2 interface; citation_author=Gritsenko V A; citation_author=Petrenko I P; citation_author=Svitasheva S N; citation_author=Wong H; citation_volume=72; citation_publication_date=1998; citation_firstpage=462; citation_doi=10.1063/1.120786; citation_journal_title=Microelectron. Eng.; citation_title=Two-fold coordinated nitrogen atom: an electron trap in MOS devices with silicon oxynitride as the gate dielectric; citation_author=Morokov Y N; citation_author=Novikov Y N; citation_author=Gritsenko V A; citation_author=Wong H; citation_volume=48; citation_publication_date=1999; citation_firstpage=175; citation_doi=10.1016/S0167-9317(99)00365-2; citation_conference_title=25th EU PV solar energy conference and exhibition; citation_author=Richter A; citation_author=Henneck S; citation_author=Benick J; citation_author=Hörteis M; citation_author=Hermle M; citation_author=Glunz S W; citation_publication_date=2010; citation_doi=10.4229/25thEUPVSEC2010-2DO.2.4; citation_title=High effiency n-type PERT and PERL solar cells; citation_conference_title=IEEE 40th Photovoltaic Special Conf. (PVSC); citation_author=Benick J; citation_author=Steinhauser B; citation_author=Müller R; citation_author=Bartsch J; citation_author=Kamp M; citation_author=Mondon A; citation_author=Richter A; citation_author=Hermle M; citation_author=Glunz S; citation_publication_date=2014; citation_journal_title=J. Appl. Phys.; citation_title=Stability of Al2O3 and Al2O3/a-SiNx: H stacks for surface passivation of crystalline silicon; citation_author=Dingemans G; citation_author=Engelhart P; citation_author=Seguin R; citation_author=Einsele F; citation_author=Hoex B; citation_author=van de Sanden M C M; citation_author=Kessels W M M; citation_volume=106; citation_publication_date=2009; citation_firstpage=114907; citation_doi=10.1063/1.3264572;