Accurate power MOSFET models including quasi-saturation effect

Baliga, B.J.: Fundamentals of Power Semiconductor Devices. Springer, New York (2008)

Darwish, M.N.: Study of the quasi-saturation effect in VDMOS transistors. IEEE Trans. Electron Devices ED–33(11), 1710–1716 (1986)

Kreuzer, C.H., Krischke, N., Nance, P.: Physically based description of quasi-saturation region of vertical DMOS power transistors. In: Proceedings of International Electron Devices Meeting, pp. 489–492 (1996)

Wang, L., et al.: Physical description of quasi-saturation and impact-ionisation effects in high-voltage drain-extented MOSFETs. IEEE Trans. Electron Devices 56(3), 492–498 (2009)

Baliga, B.J.: Advanced Power MOSFET Concepts. Springer, New York (2010)

Fujihira, T.: Theory of semiconductor superjunction devices. Jpn. J. Appl. Phys. 36, 6254–6262 (1997)

Sun, S.C., Plummer, J.D.: Electronic mobility degradation in inversion and accumulation layers on thermally oxidized silicon surface. IEEE J. Solid State Circuits 15(4), 562–573 (1980)

Seebacher, E., et al.: High-voltage MOSFET modeling. In: Gildenblat, G. (ed.) Compact Modeling: Principles, Techniques and Applications. Springer, New York (2010)

Mudholkar, M., et al.: Datasheet driven silicon carbide power MOSFET model. IEEE Trans. Power Electron 29(5), 2220–2228 (2014)

Chauhan, Y.S., et al.: A compact DC and AC model for circuit simulation of high voltage VDMOS transistor. In: Proceedings of the 7th International Symposium on Quality Electronic Design (ISQED ’06) (2006)

Aarts Annemarie, C.T., Kloosterman Willy, J.: Compact modeling of high-voltage LDMOS devices including quasi-saturation. IEEE Trans. Electron devices 53(4), 897–902 (2006)

Daniel, B.J., Parikh, C.D., Patil, M.B.: Modeling of the $$\text{ CoolMOS }^{\rm TM}$$ CoolMOS TM transistor-part II: DC model and parameter extraction. IEEE Trans. Electron Devices 49, 923–929 (2002)

El Manhawy, W., Fikry, W.: Power MOSFET macromodel accounting for saturation and quasi saturation effect. In: Canadian Conference on Electrical and Computer Engineering (2004)

Vaid, R., Padha, N., Kumar, A., Gupta, R.S., Parikh, C.D.: Modeling power VDMOSFET transistors: device physics and equivalent circuit model with parameter extraction. Indian J. Pure Appl. Phys. 42, 775–782 (2004)

Typical examples Available: http://www.nxp.com/technical-support-portal/#/tid=50802,sid=50933,tab=models

N-channel power MOSFET, STP36NF06L ST datasheet, 2006. N-channel trench power MOSFET, HUF76419S3ST $$\_$$ _ F085 Fairchild semiconductor datasheet, 2013. N-channel CoolMOS power Transistor, SPW24N60C3 Infineon datasheet, 2004

Sakurai, T., Newton, A.R.: A simple MOSFET model for circuit analysis. IEEE Trans. Electron Device 38(4), 887–894 (1991)

Sakurai, T., Newton, A.R.: Delay analysis of series-connected MOSFET circuits. IEEE J. Solid State Circuits 26(2), 112–131 (1991)

Li, Z.M., Mawby, P.A., Board, K.: A physical insight into the quasi-saturation effect in VDMOS power transistors. Int. J. Electron. 83(1), 13–22 (1997)

Lou, K.H., Liu, C.M., Kuo, B.: Analysis of the quasi-saturation behaviour considering the drain-to-source voltage and cell-spacing effects for a vertical DMOS power transistor. Solid State Electron. 36(1), 85–91 (1993)

Galadi, A., Morancho, F., Hassani, M.M.: A new accurate SPICE model for low-voltage power FLIMOSFETs. Semicond. Sci. Technol. 23(4), 045017 (2008)