A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

Chinese Physics B - Tập 23 Số 8 - Trang 087305 - 2014
Wei Mao1, Wei-Bo She1, Cui Yang2, Chao Zhang1, Tao Zhang1, Xiaohua Ma2, Jinfeng Zhang1, Hongxia Liu1, Lin‐An Yang1, Kai Zhang1, Shenglei Zhao1, Yonghe Chen1, Zheng Xuefeng1, Yue Hao1
1Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
2School of Physics and Optoelectronic Engineering, Xidian University, Xi’an, 710071, China

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Chinese Physics B

Tập 23 Số 8

087305

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