A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe

Journal of Crystal Growth - Tập 175 - Trang 677-681 - 1997
L. He1, J.R. Yang1, S.L. Wang1, S.P. Guo1, M.F. Yu1, X.Q. Chen1, W.Z. Fang1, Y.M. Qiao1, Q.Y. Zhang2, R.J. Ding2, T.L. Xin2
1Epitaxy Research Center for Advanced Materials, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 420 Zhong Shan Bei Yi Rd, Shanghai 200083, People's Republic of China
2Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 420 Zhong Shan Bei Yi Rd, Shanghai 200083, People's Republic of China

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