A new readout circuit for an ultrahigh sensitivity CMOS image sensor
Tóm tắt
We have developed a new readout circuit for highly sensitive CMOS image sensors. The circuit makes it possible to obtain a high signal-to-noise ratio by effectively transferring signal charges accumulated in the photodiode to a small capacitance. We fabricated and tested a CMOS image sensor with the readout circuit, and confirmed that it has higher sensitivity than conventional passive-pixel CMOS image sensors.
Từ khóa
#CMOS image sensors #FETs #Pixel #Solid state circuits #Image sensors #Parasitic capacitance #Voltage #Signal to noise ratio #Photodiodes #Circuit testingTài liệu tham khảo
10.1109/IEDM.2000.904412
10.1109/16.628814
watabe, 1999, CMOS Image Sensor overlaid with a HARP Photoconversion Layer, Proc IEEE Workshop on CCD and Advanced Image Sensors, 211
10.1109/16.944177
10.1109/16.78367
10.1109/11.536588
10.1109/4.890321
10.1109/4.890320
10.1109/ISSCC.1996.488499