A new photoconductive sensor for 10.6- mu m infrared radiation

IEEE Transactions on Instrumentation and Measurement - Tập 37 Số 1 - Trang 137-141 - 1988
K. Kikuchi1, M. Saguchi2, Ainosuke Oshimoto1
1Department of Electrical Engineering, National Defense Academy, Yokosuka, Japan
2Air Self Defense Force, Yokosuka, Japan

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Tài liệu tham khảo

kikuchi, 1985, Improvement of responsivity of 10.6 ?m hot-carrier detector by resonant effect, Proc 25th Int Infrared and Millimeter Waves Conf, 109

10.1109/JQE.1973.1077407

10.1016/0022-3697(56)90014-2

10.1364/AO.12.002549

agafonov, 1975, Experimental investigation of energy relaxation in p-type Ge under interband optical excitation condition, Sov Phys Semicond, 9, 571

10.1143/JPSJ.36.485

10.1002/pssb.19640060302

10.1002/ecja.4400641014

harrison, 1966, hot-carrier microwave detector, Proceedings of the IEEE, 54, 588, 10.1109/PROC.1966.4778

10.1109/JQE.1982.1071373

10.1109/TIM.1981.6312398

10.1088/0508-3443/14/10/317

arams, 1966, millimeter mixing and detection in bulk insb, Proceedings of the IEEE, 54, 612, 10.1109/PROC.1966.4781

10.1364/OL.1.000178