A monolithic field emitter array with a JFET

IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1665-1668 - 2002
H. Shimawaki1, K. Tajima2, H. Mimura2, K. Yokoo2
1Department of Electrical and Electronic Engineering, Faculty of Engineering, Hachinohe Institute of Technology, Hachinohe, Japan
2Research Institute of Electrical Communication, University of Tohoku, Sendai, Japan

Tóm tắt

This paper proposes a novel structure of the conical Si field emitters monolithically incorporating a vertical-type junction field effect transistor (JFET) and demonstrates the emission control in field emission from the emitters. The proposal has many attractive advantages in the display application and reliable fabrication, because the structure needs neither additional area for the JFET nor additional process except ion implantation. The experimental results of the emitters show excellent controllability and stability in the emission current.

Từ khóa

#Silicon #Vacuum microelectronics #Arrays #Electron emission #JFETs #Stability

Tài liệu tham khảo

10.1109/6.666960 10.1063/1.322600 10.1143/JJAP.35.L84 kobori, 1992, Field emission cathode ting, 1991, field-effect controlled vacuum field-emission cathode, Tech Dig 4th Int Vacuum Microelectronics Conf, 200 10.1143/JJAP.35.L861 gray, 2000, Method of production of FET regulatable field emitter device gray, 1994, Regulatable field emitter device and method of production thereof greene, 1985, vacuum integrated circuits, 1985 International Electron Devices Meeting, 172, 10.1109/IEDM.1985.190922 10.1116/1.588340 10.1063/1.1656810
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Thông tin xuất bản

IEEE Transactions on Electron Devices

Tập 49 Số 9

1665-1668

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