A charge pump with a 0.32 % of current mismatch for a high speed PLL
Tóm tắt
A charge pump is a widely used circuit in modern PLLs. In order to reduce phase offset, and decrease spurs tones in the PLL output signals, the charge pump current mismatch has to be minimized. In this paper, a charge pump circuit with low current mismatch characteristic that was designed with a standard 0.18
$$\upmu $$
m CMOS technology. A Mentor Graphics environment using Eldo program was used to carry out the schematic, layout, and post-layout simulations. Under 1.8 V DC supply voltage, and 100
$$\upmu $$
A output current, the circuit consumes only 0.56 mW in fully differential mode, and 0.38 mW for a single ended configuration. Using the same bias current for UP, and DN signals, and three wide-swing current mirrors a 0.32 % current mismatch with a 0.3–1.5 V wide output voltage range was achieved. The circuit can be widely used in either single-ended or fully differential phase locked loop structures.
Tài liệu tham khảo
Xu, H., & Li, Z. (2012). Design of a low power charge pump circuit for phase-locked loops. In High Speed Intelligent Communication Forum (HSIC) 2012 4th International, (pp. 1–4)
Zeng, Y., Wang, Q., Ni, Zhang., Zeng, J.-P., Zhou, S.-H., & Xie H.-Q. (2009). Design of novel fully-differential charge pump. In Wireless Communications Signal Processing, 2009. WCSP 2009. International Conference on pp. (1–4).
Razavi, B., (2001). Design of analog CMOS integrated circuits. Electrical Engineering. McGraw Hill: University of California, Los Angeles.
Park, J.-W., Kim, N.-S., Jeong, H.-I., Won, D.S. & Choi H.Y. (2014) High performance two-stage charge-pump for spur reduction in CMOS PLL. In Multi-Conference on Systems, Signals Devices (SSD), 2014 11th International, (pp. 1–7).
Joram, N., Wolf, R., & Ellinger, F. (2014). High swing PLL charge pump with current mismatch reduction. Electronics Letters, 50(9), 661–663.
Hwang, M.-S., Kim, J., & Jeong, D.-K. (2009). Reduction of pump current mismatch in charge-pump PLL. Electronics Letters, 45(3), 135–136.
