A Transmission Line Model for Silicided Diffusions: Impact on the Performance of VLSI Circuits

ohta, 1979, A quadruply self-aligned MOS (QSA MOS); A new short-channel high-speed high-density MOSFET for VLSI, IEDM Tech Dig, 581

10.1109/T-ED.1980.20040

hunter, 1980, new edge-defined vertical-etch approaches for submicrometer mosfet fabrication, 1980 International Electron Devices Meeting, 764, 10.1109/IEDM.1980.189949

10.1109/T-ED.1969.16904

10.1149/1.2407513

10.1016/0038-1101(72)90048-2

antoniadis, 0, SUPREM II-A program for IC process modeling and simulation

ohta, 1982, quadruply self-aligned stacked high-capacitance ram using ta<inf>2</inf>o<inf>5</inf>high-density vlsi dynamic memory, IEEE Transactions on Electron Devices, 29, 368, 10.1109/T-ED.1982.20711

10.1063/1.328078

scott, 1981, vib-1 scaling limitations of p channel devices in a cmos technology, IEEE Transactions on Electron Devices, 28, 1259, 10.1109/T-ED.1981.20590

10.1016/0038-1101(80)90165-3

sabnis, 1979, characterization of the electron mobility in the inverted &lt;100&gt; si surface, 1979 International Electron Devices Meeting, 18, 10.1109/IEDM.1979.189528

mochizuki, 1980, film properties of mosi<inf>2</inf>and their application to self-aligned mosi<inf>2</inf>gate mosfet, IEEE Transactions on Electron Devices, 27, 1431, 10.1109/T-ED.1980.20052

10.1116/1.570560

el-mansy, 1980, On scaling MOS devices for VLSI, ICCE Conf Proc, 457

chatterjee, 1980, the impact of scaling laws on the choice of n-channel or p-channel for mos vlsi, IEEE Electron Device Letters, 1, 220, 10.1109/EDL.1980.25295

10.1109/JSSC.1974.1050511

10.1109/T-ED.1980.20116

shah, 1979, refractory metal gate processes for vlsi applications, IEEE Transactions on Electron Devices, 26, 631, 10.1109/T-ED.1979.19470

crowder, 1979, 1 &#181;m mosfet vlsi technology: part vii&#8212;metal silicide interconnection technology&#8212;a future perspective, IEEE Transactions on Electron Devices, 26, 369, 10.1109/T-ED.1979.19436

stern, 1974, Quantum properties of surface space-charge layers, CRC Crit Rev Solid State Sci, 4, 499, 10.1080/10408437308245840

iwai, 1980, two dimensional nature of diffused line capacitance in coplanar mos structures, 1980 International Electron Devices Meeting, 728, 10.1109/IEDM.1980.189940

richman, 1967, Characteristics and Operation of MOS Field Effect Devices, 54

10.1016/0038-1101(70)90056-0