A New Dual-Material Double-Gate (DMDG) Nanoscale SOI MOSFET—Two-Dimensional Analytical Modeling and Simulation

IEEE Transactions on Nanotechnology - Tập 4 Số 2 - Trang 260-268 - 2005
G. Venkateshwar Reddy1, M. Jagadesh Kumar1
1Dept. of Electr. Eng., Indian Inst. of Technol., Delhi, India#TAB#

Tóm tắt

Từ khóa


Tài liệu tham khảo

10.1109/IEDM.1999.823850

10.1109/16.249482

10.1109/55.334669

10.1109/16.760391

10.1109/16.735743

10.1109/TDMR.2004.824359

10.1109/TED.2004.823803

10.1109/IEDM.1988.32784

10.1109/16.469401

10.1016/0038-1101(95)00083-6

10.1109/16.725262

10.1109/16.817576

tanaka, 1991, analysis of p<formula><tex>$^{+}$</tex></formula> double-gate thin film soi mosfet's, Int Electron Devices Meeting Tech Dig, 683

10.1109/16.293312

horie, 1991, fabrication of double-gate thin-film soi mosfet's using wafer bonding and polishing, SSDM Tech Dig, 165

10.1109/EDL.1987.26677

10.1109/16.753720

10.1109/IEDM.1992.307422

10.1016/0038-1101(94)90085-X

10.1109/55.144946

10.1109/IEDM.1990.237128

10.1143/JJAP.32.4916

10.1109/5.915374

10.1109/16.19942

10.1109/55.6946

10.1109/16.491249

10.1109/55.2051

chou, 1985, observation of electron velocity overshoot in sub-100-nm-channel mosfet's in silicon, IEEE Electron Device Letters, 6, 665, 10.1109/EDL.1985.26267

10.1109/16.568047

10.1109/55.244738