A New Approach to Single Event Effect Tolerance Based on Asynchronous Circuit Technique

Springer Science and Business Media LLC - Tập 24 - Trang 57-65 - 2008
Rui Gong1, Wei Chen1, Fang Liu1, Kui Dai1, Zhiying Wang1
1School of Computer, National University of Defense Technology, Changsha, PR China

Tóm tắt

Some asynchronous circuit techniques are proposed to provide a new approach to Single Event Effect (SEE) tolerance in synchronous circuits. Two structures, Double Modular Redundancy (DMR) and Temporal Spatial Triple Modular Redundancy with Dual Clock Triggered Register (TSTMR-D), are presented. Three SEE tolerant 8051 cores with DMR, TSTMR-D and traditional Triple Modular Redundancy (TMR) are implemented in SMIC 0.35 μm process. The results of fault injection experiments indicate that DMR has a relatively low overhead on both area and latency than TMR, while tolerates SEU in sequential logic. TSTMR-D provides tolerance for both SEU and SET with reasonable area and latency overhead.

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