A Microstructual Analysis of Au/Pd/Ti Ohmic Contacts for GaAs-Based Heterojunction Bipolar Transistors (HJBTs).

Springer Science and Business Media LLC - 1991
Bernard M. Henry1, A. E. Staton-Bevan1, V. K. M. Sharma1, M. A. Crouch2, S. S. Gill2
1Department of Materials, Imperial College, London University, London, UK
2D.R.A. (Electronics Division), R.S.R.E., Malvern, Worcs., UK

Tóm tắt

Au/Pd/Ti and Au/Ti/Pd ohmic structures to thin p+-GaAs layers have been investigated for use as contacts to the base region of HJBTs. The Au/Pd/Ti contact system yielded specific contact resistivities at or above 2.8 × 10-5Ωcm2. Heat treatments up to 8 minutes at 380°C caused only limited interaction between the metallization and the semiconductor. The metal penetrated to a maximum depth of ≃2nm. Specific contact resistivity values less than 10-5Ω2 were achieved using the Au/Ti/Pd (400/75/75nm) scheme. The nonalloyed Au/Ti/Pd contact showed the best combination of electrical and structural properties with a contact resistivity value of 9 × 10-6Ωcm2 and Pd penetration of the GaAs epilayer to a depth of ≃30nm.

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Tài liệu tham khảo

R. C. Brooks, C. L. Chen, A. Chu, L. J. Mahoney, J. G. Mavroides, M. J. Manfra and M. C. Finn, IEEE Electron Device Lett. EDL-6, 525 (1985).

T. Sanada and O. Wada, Jpn. J. Appl. Phys., 19, 491 (1980).

R. Fischer and H. Morkoc, IEEE Electron Device Lett. EDL-7, 359 (1986).

C. Dubon-Chevallier, M. Gauneau, J. F. Bresse, A. Izrael and D. Ankri, J. Appl. Phys. 59, 3783 (1986).

R. Bruce, D. Clark and S. Eicher, J. Electron. Materials 19(3), 225 (1990).

I. Ladany and D. P. Marinelli, RCA Rev. 44, 101 (1983).

C. Y. Su and C. Stolte, Electron. Lett. 19, 891 (1983).

G. S. Jackson, E. Tong, P. Saledas, T. E. Kazior, R. Srague, R. C. Brooks and K. C. Hsieh, Mat. Res. Soc. Symp. Proc. 181, 289 (1990).

H. H. Berger, Solid St. Electron. 15, 145 (1972).

S. M. Sze, Physics of Semiconductor Devices, 2nd. edition (J. Wiley-Interscience Publishers, New York, 1981), p. 21.

B. M. Henry, A. E. Staton-Bevan, V. K. M. Sharma, M. A. Crouch and S. S. Gill, to be published.

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