A Genetic Algorithm Based Approach for the Extraction of Optical Parameters

Silicon - Tập 8 - Trang 245-250 - 2015
Md. Ghulam Saber1, Rakibul Hasan Sagor1, Ashik Ahmed1
1Department of Electrical and Electronic Engineering, Islamic University of Technology (IUT), Gazipur, Bangladesh

Tóm tắt

We present the Debye model parameters of four materials which are extensively used in the field of electronics and photonics. The parameters have been extracted using a Genetic Algorithm (GA) based technique. We have determined the complex relative permittivity using the extracted modeling parameters and compared with the experimentally obtained ones. A very good agreement has been found in each case which validates our extracted parameters. The associated root-mean-square (RMS) deviations have been found to be 0.3894, 0.026, 0.8163 and 0.4370 for graphene, graphene oxide, aluminum zinc oxide (AZO) and gallium zinc oxide (GZO) respectively.

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