A Continuum Model of DC and RF Discharges

IEEE Transactions on Plasma Science - Tập 14 Số 2 - Trang 78-91 - 1986
David B. Graves1,2, Klavs F. Jensen3
1Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
2Department of Chemical Engineering, University of California, Berkeley, CA USA
3Department of Chemical Engineering and Materials, University of Minnesota, Minneapolis, MN, USA

Tóm tắt

Từ khóa


Tài liệu tham khảo

10.1063/1.332763

10.1088/0022-3727/14/12/008

chung, 1975, Electric Probes in Stationary and Flowing Plasmas Theory and Application, 10.1007/978-3-642-65886-0

10.1063/1.1692718

benner, 1983, Equilibria stability and bifurcations in the physics of fluid interfaces

10.1016/0045-7930(81)90026-8

lapidus, 1982, Numerical Solution Of Partial Differential Equations in Science and Engineering

10.1007/978-3-642-85949-6

10.1063/1.335702

long, 1979, Plasma Sheath Processes, 10.21236/ADA070819

10.1103/PhysRev.112.1852

10.1016/0378-4363(76)90272-2

10.1063/1.1694399

10.1063/1.1702550

10.1103/PhysRevA.31.1046

10.1063/1.323606

10.1007/BF00565992

10.1116/1.569958

kushner, 1982, A kinetic study of the plasma etching process. 1. A model for the etching of Si and SiO<subscript>2</subscript> in C<subscript>n</subscript>H<subscript>m/</subscript>H<subscript>2</subscript> and C<subscript>n</subscript>Fm/O<subscript>2</subscript> plasmas, J Appl Phys, 53, 2923, 10.1063/1.331074

10.1557/PROC-38-201

10.1103/PhysRev.93.84

10.1116/1.572964

10.1116/1.572466

10.1063/1.93948