A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability
Tóm tắt
Theories of interface trap generation in Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) mechanisms are unified under the geometric interpretation and computational modeling of Reaction-Diffusion (R-D) theoryframework. Analytical derivations that predict the degradation are shown, simulation methodology is explained and numerical solutions are obtained. Time-exponents and degradation behavior under dynamic bias in agreement with experimental observations are discussed. Implications regarding ultra-scaled surround-gate device structures are presented.
Tài liệu tham khảo
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