A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process
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Kraus, A 42.5 mm2 1 Mb nonvolatile ferroelectric memory utilizing advanced architecture for enhanced reliability, Symp. VLSI Circuits Dig. Tech. Papers, 242
Miyakawa, A 0.5μ m 3 V 1T1C 1 Mb FRAM with a variable reference bitline voltage scheme using a fatigue-free reference capacitor, IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 42, 104