A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier

Current Applied Physics - Tập 4 - Trang 25-29 - 2004
Ki-Chul Chun1, Jae-Yoon Sim1, Hongil Yoon2, Hyun-Seok Lee1, Sang-Pyo Hong1, Kyu-Chan Lee1, Jei-Hwan Yoo1, Dong-Il Seo1
1DRAM Design Team 1, Memory Division, Samsung Electronics Co., San 16 Banwol-Ri, Taean-Eup, Hwasung-City, Kyunggi-Do 445-701, South Korea
2CITY, Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea

Tài liệu tham khảo

Kimura, 2003, Curr. Appl. Phys., 3, 9, 10.1016/S1567-1739(02)00227-4 Shin, 2003, Curr. Appl. Phys., 3, 61, 10.1016/S1567-1739(02)00237-7 Sim, 2003, JSSC, 38, 631 Nakagome, 1991, JSCC, 26, 465 Hamamoto, 1991, VLSI Circ. Dig. Tech. Papers, 26, 525 Seevinck, 1991, JSSC, 26, 525 Shibata, 1996, IEICE Trans. Electron., 1120 Yoo, 2003, ISSSC, 64, 312 Nakamura, 1996, JSCC, 31, 1302
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Current Applied Physics

Tập 4

25-29

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