Paralinear Oxidation of CVD SiC in Water Vapor

Journal of the American Ceramic Society - Tập 80 Số 1 - Trang 197-205 - 1997
Elizabeth J. Opila1,2,3, Raiford E. Hann2,4
1Department of Chemical Engineering, Cleveland State University, Cleveland, Ohio 44115
2*Member, American Ceramic Society.
3Resident Research Associate at NASA—Lewis Research Center.
4NASA-Lewis Research Center, Cleveland, Ohio 44135

Tóm tắt

The oxidation kinetics of CVDSiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 1.4 cm/s for temperatures between 1200” and 1400°C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long‐term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.

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