Material and n–p junction characteristics of As- and Sb-implanted SiC

Diamond and Related Materials - Tập 9 - Trang 1887-1896 - 2000
Jesse B. Tucker1, Mulpuri V. Rao1, O.W. Holland2, P.H. Chi3, G.C.B. Braga4, J.A. Freitas4, N. Papanicolaou4
1Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030-4444, USA
2Oak Ridge National Laboratory, Oak Ridge, TN 37831-6048, USA
3National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
4Naval Research Laboratory, Washington, DC 20375, USA

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Diamond and Related Materials

Tập 9

1887-1896

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