Electric field modulation of electronic structures in InSe and black phosphorus heterostructure
Tài liệu tham khảo
Du, 2008, Nat. Nanotechnol., 3, 491, 10.1038/nnano.2008.199
Wang, 2012, Nat. Nanotechnol., 7, 699, 10.1038/nnano.2012.193
Tran, 2014, Phys. Rev. B, 89, 235319, 10.1103/PhysRevB.89.235319
Li, 2014, Nat. Nanotechnol., 9, 372, 10.1038/nnano.2014.35
Qiao, 2014, Nat. Commun., 5, 4475, 10.1038/ncomms5475
Long, 2016, Nano Lett., 16, 7768, 10.1021/acs.nanolett.6b03951
Long, 2017, Sci. Adv., 3, e1700589, 10.1126/sciadv.1700589
Ye, 2017, Nano Energy, 37, 53, 10.1016/j.nanoen.2017.05.004
Ye, 2016, ACS Photonics, 3, 692, 10.1021/acsphotonics.6b00079
Li, 2017, ACS Photonics, 4, 823, 10.1021/acsphotonics.6b00778
Kuroda, 1980, Solid State Commun., 34, 481, 10.1016/0038-1098(80)90656-0
Kress-Rogers, 1982, Solid State Commun., 44, 379, 10.1016/0038-1098(82)90874-2
Segura, 1984, Phys. Rev. B, 29, 5708, 10.1103/PhysRevB.29.5708
Camassel, 1978, Phys. Rev. B, 17, 4718, 10.1103/PhysRevB.17.4718
Huang, 2016, CrystEngComm, 18, 3968, 10.1039/C5CE01986A
Xu, 2016, Nanoscale, 8, 16802, 10.1039/C6NR05976G
Bandurin, 2017, Nat. Nanotechnol., 12, 223, 10.1038/nnano.2016.242
Feng, 2015, Phys. Chem. Chem. Phys., 17, 3653, 10.1039/C4CP04968C
Feng, 2014, Adv. Mater., 26, 6587, 10.1002/adma.201402427
Mudd, 2013, Adv. Mater., 25, 5714, 10.1002/adma.201302616
Mudd, 2015, Adv. Mater., 27, 3760, 10.1002/adma.201500889
Luo, 2015, Adv. Opt. Mater., 3, 1418, 10.1002/adom.201500190
Yan, 2017, Nanotechnology, 28, 10.1088/1361-6528/aa8229
Debbichi, 2015, J. Phys. Chem. Lett., 6, 3098, 10.1021/acs.jpclett.5b01356
Zhuang, 2013, Chem. Mater., 25, 3232, 10.1021/cm401661x
Errandonea, 2006, High Press. Res., 26, 513, 10.1080/08957950601101787
Zhang, 2001, Phys. Rev. B, 63, 075205, 10.1103/PhysRevB.63.075205
Li, 2005, Phys. Rev. B, 72, 125325, 10.1103/PhysRevB.72.125325
Kang, 2013, Appl. Phys. Lett., 102, 012111, 10.1063/1.4774090
Huang, 2015, J. Phys. Chem. Lett., 6, 2483, 10.1021/acs.jpclett.5b00976
Ma, 2016, Phys. Chem. Chem. Phys., 18, 28466, 10.1039/C6CP06046C
Shu, 2017, Phys. Chem. Chem. Phys., 19, 10644, 10.1039/C7CP00695K
Wan, 2015, Nanotechnology, 26, 435702, 10.1088/0957-4484/26/43/435702
Wood, 2014, Nano Lett., 14, 6964, 10.1021/nl5032293
Choi, 2016, Nano Lett., 16, 3969, 10.1021/acs.nanolett.5b04957
Avsar, 2015, ACS Nano, 9, 4138, 10.1021/acsnano.5b00289
Kresse, 1993, Phys. Rev. B, 47, 558, 10.1103/PhysRevB.47.558
Kresse, 1996, Comput. Mater. Sci., 6, 15, 10.1016/0927-0256(96)00008-0
Kresse, 1999, Phys. Rev. B, 59, 1758, 10.1103/PhysRevB.59.1758
Klimeš, 2010, J. Phys. Condens. Matter, 22, 022201, 10.1088/0953-8984/22/2/022201
Klimeš, 2011, Phys. Rev. B, 83, 195131, 10.1103/PhysRevB.83.195131
Xi, 2012, Nanoscale, 4, 4348, 10.1039/c2nr30585b
Fei, 2014, Nano Lett., 14, 2884, 10.1021/nl500935z
Wang, 2015, J. Phys. Chem. C, 119, 4752, 10.1021/jp507751p
Preuss, 2005, Phys. Rev. Lett., 94, 236102, 10.1103/PhysRevLett.94.236102
Tang, 2014, Sci. Rep., 4, 7007, 10.1038/srep07007
Henkelman, 2006, Comput. Mater. Sci., 36, 354, 10.1016/j.commatsci.2005.04.010
Tang, 2009, J. Phys. Condens. Matter, 21, 084204, 10.1088/0953-8984/21/8/084204
Padilha, 2017, Phys. Rev. B, 95, 195143, 10.1103/PhysRevB.95.195143
Shang, 2017, RSC Adv., 7, 14625, 10.1039/C6RA28383G
Cao, 2016, J. Phys. Chem. C, 120, 11299, 10.1021/acs.jpcc.6b03308
Sinyavskii, 2011, Semiconductors, 45, 1032, 10.1134/S1063782611080185
Li, 2016, Nat. Commun., 7, 11480, 10.1038/ncomms11480