Yuan Qin1,2, Li‐Heng Li3, Zhaoan Yu1, Feihong Wu2, Danian Dong1, Wei Guo2, Zhongfang Zhang2, Jun‐Hui Yuan3, Kan‐Hao Xue3, Xiangshui Miao3, Shibing Long2
1Key Laboratory of Microelectronics Devices & Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China
2School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
3Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Tóm tắt
AbstractThe growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐performance metal‐semiconductor‐metal (MSM) SBPDs based on amorphous (a‐) Ga2O3 via a post‐annealing process. The post‐annealed MSM a‐Ga2O3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain‐bandwidth product over 104 at 5 V. The SBPDs also show ultrahigh photo‐to‐dark current ratio of 3.9 × 107. Additionally, the PDs demonstrate super‐high specific detectivity of 3.9 × 1016 Jones owing to the extremely low noise down to 3.5 fW Hz−1/2, suggesting high signal‐to‐noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large‐scale, high‐uniformity 32 × 32 image sensor array based on the post‐annealed a‐Ga2O3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga2O3 PDs for applications in solar‐blind imaging, environmental monitoring, artificial intelligence and machine vision.
