Anti-Site Bonds and the Structure of Interfaces in SiC
Tóm tắt
High resolution electron microscopy has been used to study the structure of the 3C/6H interface, Σ=3 {111} and Σ=3 {112} grain boundaries in 3C-SiC. In SiC, as in other compound semiconductors, anti-site bonds occur in a variety of defects. These are high energy bonds comparable to that of dangling bonds. But, while dangling bonds at the grain boundaries may be eliminated by reconstruction just as in elemental semiconductors, it may not be possible to avoid anti-site bonds. These problems are discussed for the Σ=3 {112} grain boundary, where the structures proposed for Ge and Si are used as starting models for SiC.
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