Thickness dependent roughening of Ga(As,N)/GaAs MQW structures with high nitrogen content

Journal of Crystal Growth - Tập 251 - Trang 399-402 - 2003
G. Mussler1, L. Däweritz1, K.H. Ploog1
1Nanostucturing, Paul-Drude-Institut, für Festkörperelektronik, Hausvogteiplatz, 5-7, 10117 Berlin, Germany

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