Yancheng Chen1, Ying‐Jie Lu1, Meiyong Liao2, Yongzhi Tian1, Qian Liu1, Chaojun Gao1, Xun Yang1, Chong‐Xin Shan1
1Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001 China
2Research Center for Functional Materials, National Institute for Materials Sciences, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
Tóm tắt
AbstractA 3D solar‐blind photodetector array is realized from amorphous Ga2O3 films grown on polyethylene terephthalate substrates via an origami route. The photodetector cells exhibit a dark current of 0.17 nA, and the peak responsivity is about 8.9 A W−1 at 250 nm with a quantum efficiency of 4450%. The photodetector shows a distinct cut‐off wavelength at 268 nm with a solar‐blind ratio of more than two orders of magnitude (photocurrent ratio between 250 nm/300 nm). The photodetector cells reveal excellent electrical stability after thousands of bending cycles. All the photodetector cells of the 3D photodetector array have a highly consistent performance. In addition, the device can execute the functions of capturing a real‐time light trajectory and identifying multipoint light spatial distribution, which cannot be achieved in all the previously reported 2D solar‐blind photodetectors. The results suggest new pathways to fabricate 3D photodetectors from conventional semiconductor films, which may find potential applications in optical positioning, tracking, imaging and communications, etc.
