Te‐Doped Black Phosphorus Field‐Effect Transistors

Advanced Materials - Tập 28 Số 42 - Trang 9408-9415 - 2016
Bingchao Yang1, Bensong Wan2,3, Qionghua Zhou4, Yue Wang5, Wentao Hu1, Weiming Lv3,1, Qian Chen4, Zhongming Zeng3, Fusheng Wen1, Jianyong Xiang1, Shijun Yuan4, Jinlan Wang4, Baoshun Zhang3, Wenhong Wang5, Junying Zhang2, Bo Xu1, Zhisheng Zhao1, Yongjun Tian1, Zhongyuan Liu1
1State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004 P. R. China
2Department of Physics, Beihang University, Beijing 100191, China
3Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou, 215123 China
4Department of Physics, Southeast University, Nanjing 211189, China
5Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

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Thông tin xuất bản

Advanced Materials

Tập 28 Số 42

9408-9415

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