Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices

Materials Science and Engineering: R: Reports - Tập 44 - Trang 151-184 - 2004
B.P. Gila1, F. Ren2, C.R. Abernathy3
1Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
2Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
3Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA

Tài liệu tham khảo

Nguyen, 2000, Electron. Lett., 36, 468, 10.1049/el:20000352 Wu, 1997, Solid State Electron., 41 Khan, 2000, IEEE Electron. Dev. Lett., 21, 10.1109/55.821668 Green, 2000, IEEE Electron. Dev. Lett., 21, 268, 10.1109/55.843146 Binari, 1997, Solid State Electron., 41, 1549, 10.1016/S0038-1101(97)00103-2 K.K. Chu, J.A. Smart, J.R. Shealy, L.F. Eastman, in: Proceedings of the State-of-The-Art Program on Compound Semiconductors (SOTAPOCS XX/X, Electrochem. Soc., Pennington, NJ, 1998) M. 3–12. Eastman, 2001, IEEE Trans. Electron. Dev., 48, 479, 10.1109/16.906439 Wu, 2001, IEEE Trans. Electron. Dev., ED48, 586 Johnson, 2001, Solid State Electron., 45, 1979, 10.1016/S0038-1101(01)00255-6 Lu, 2001, IEEE Trans. Electron. Dev., ED48, 581, 10.1109/16.906454 Pearton, 1999, J. Appl. Phys., 86, 1, 10.1063/1.371145 Simin, 2000, Electron. Lett., 36, 2043, 10.1049/el:20001401 Kohn, 1999, Electron. Lett., 35, 1022, 10.1049/el:19990697 Lee, 2001, Electron. Lett., 37, 30, 10.1049/el:20010020 Hu, 2001, Appl. Phys. Lett., 79, 2832, 10.1063/1.1412591 Daumiller, 1999, IEEE Electron. Dev. Lett., 20, 448, 10.1109/55.784448 Tarakji, 2001, Appl. Phys. Lett., 78, 2169, 10.1063/1.1363694 Chumbes, 2001, IEEE Trans. Electron. Dev., 48, 416, 10.1109/16.906429 Luo, 2001, Appl. Phys. Lett., 79, 2196, 10.1063/1.1408606 Pearton, 2000, Mat. Sci. Eng. Rep., R30, 55, 10.1016/S0927-796X(00)00028-0 Binari, 2001, IEEE Trans. Electron. Dev., 48, 465, 10.1109/16.906437 Simin, 2001, Appl. Phys. Lett., 79, 2651, 10.1063/1.1412282 Ren, 1998, Appl. Phys. Lett., 73, 3893, 10.1063/1.122927 Johnson, 2000, Appl. Phys. Lett., 77, 3230, 10.1063/1.1326041 Gila, 2001, ECS Proc., 1, 71 Asif Khan, 2001, Appl. Phys. Lett., 77, 339 Simin, 2001, IEEE Electron. Dev. Lett., 22, 53, 10.1109/55.902829 Morkoç, 2002, Solid State Electron., 46, 157, 10.1016/S0038-1101(01)00271-4 Ohno, 2001, IEEE Trans. Electron. Dev., ED48, 517, 10.1109/16.906445 Wu, 2001, IEEE Trans. Electron. Dev., ED48, 586 Arulkumaran, 1998, Appl. Phys. Lett., 73, 809, 10.1063/1.122009 Irokawa, 2002, Solid State Electron., 46, 1467, 10.1016/S0038-1101(02)00086-2 Lay, 2001, Solid State Electron., 45, 1679, 10.1016/S0038-1101(01)00175-7 Hashizume, 2000, J. Appl. Phys., 88, 1983, 10.1063/1.1303722 Zhang, 2000, IEEE Electron. Dev. Lett., 21, 421, 10.1109/55.863096 Gila, 2001, Phys. Stat. Solidi, 188, 239, 10.1002/1521-396X(200111)188:1<239::AID-PSSA239>3.0.CO;2-D Klein, 2001, Appl. Phys. Lett., 79, 3527, 10.1063/1.1418452 Luo, 2002, Appl. Phys. Lett., 80, 1661, 10.1063/1.1455692 Mehandru, 2002, Electrochem. Solid State Lett., 5, G51, 10.1149/1.1479298 Kim, 2002, Appl. Phys. Lett., 81, 373, 10.1063/1.1492852 Kim, 2002, Appl. Phys. Lett., 80, 4555, 10.1063/1.1487903 Kim, 2002, J. Electrochem. Soc., 149, 482, 10.1149/1.1489689 Asif Khan, 1997, Solid State Electron., 41, 1555, 10.1016/S0038-1101(97)00104-4 Nguyen, 1999, Electron. Lett., 35, 1356, 10.1049/el:19990957 Tarakji, 2001, Appl. Phys. Lett., 78, 2169, 10.1063/1.1363694 Luo, 2001, Appl. Phys. Lett., 79, 2196, 10.1063/1.1408606 Pearton, 2000, Mat. Sci. Eng. Rep., 30, 55, 10.1016/S0927-796X(00)00028-0 Binari, 2001, IEEE Trans. Electron. Dev., 48, 465, 10.1109/16.906437 Shur, 1998, Solid State Electron., 42, 2131, 10.1016/S0038-1101(98)00208-1 Morkoç, 2002, Solid State Electron., 46, 157, 10.1016/S0038-1101(01)00271-4 Ohno, 2001, IEEE Trans. Electron. Dev., ED48, 517, 10.1109/16.906445 Morkoc, 1999 Gaffey, 2001, IEEE Trans. Electron. Dev., 48, 458, 10.1109/16.906436 Arulkumaran, 1998, Appl. Phys. Lett., 73, 809, 10.1063/1.122009 Lay, 2001, Solid State Electron., 45, 1679, 10.1016/S0038-1101(01)00175-7 Hashizume, 2000, J. Appl. Phys., 88, 1983, 10.1063/1.1303722 Zhang, 2000, IEEE Electron. Dev. Lett., 21, 421, 10.1109/55.863096 Therrien, 1999, Phys. Stat. Solidi., 176, 793, 10.1002/(SICI)1521-396X(199911)176:1<793::AID-PSSA793>3.0.CO;2-V Gila, 2001, Phys. Stat. Solidi, 188, 239, 10.1002/1521-396X(200111)188:1<239::AID-PSSA239>3.0.CO;2-D Klein, 2001, Appl. Phys. Lett., 79, 3527, 10.1063/1.1418452 Klein, 1999, Appl. Phys. Lett., 75, 4016, 10.1063/1.125523 Klein, 2000, J. Appl. Phys., 88, 2843, 10.1063/1.1287127 Klein, 2001, IEEE Electron. Lett., 37, 661, 10.1049/el:20010434 Luo, 2002, Solid State Electron., 46, 467, 10.1016/S0038-1101(01)00314-8 Simin, 2001, Phys. Stat. Sol. A, 188, 219, 10.1002/1521-396X(200111)188:1<219::AID-PSSA219>3.0.CO;2-L Tarakji, 2002, Solid State Electron., 46, 1211, 10.1016/S0038-1101(02)00015-1 Koudymov, 2002, IEEE Elec. Dev. Lett., 23, 449, 10.1109/LED.2002.801301 Simin, 2002, IEEE Elec. Dev. Lett., 23, 458, 10.1109/LED.2002.801316 Asif Khan, 2000, Appl. Phys. Lett., 77, 1339, 10.1063/1.1290269 Hu, 2001, Appl. Phys. Lett., 79, 2832, 10.1063/1.1412591 Ren, 1998, Appl. Phys. Lett., 73, 3839, 10.1063/1.122927 Johnson, 2000, Appl. Phys. Lett., 77, 3230, 10.1063/1.1326041 Zhang, 2000, IEEE Electron. Dev. Lett., 21, 421, 10.1109/55.863096 Casey, 1996, Appl. Phys. Lett., 68, 1850, 10.1063/1.116034 Therrien, 1999, Phys. Stat. Solidi A, 176, 793, 10.1002/(SICI)1521-396X(199911)176:1<793::AID-PSSA793>3.0.CO;2-V Therrien, 2000, Appl. Surf. Sci., 166, 513, 10.1016/S0169-4332(00)00485-2 Hashizume, 2000, J. Appl. Phys., 88, 1983, 10.1063/1.1303722 Khan, 2000, IEEE Electron. Dev. Lett., 21, 63, 10.1109/55.821668 Johnson, 2001, J. Electrochem. Soc., 146, 4303 Arulkumaran, 1998, Appl. Phys. Lett., 73, 809, 10.1063/1.122009 Ivanov, 2001, Electron. Lett., 37, 1479, 10.1049/el:20010982 Chen, 2001, Appl. Phys. Lett., 79, 3530, 10.1063/1.1418451 Mistele, 2001, Mat. Res. Soc. Symp. Proc., 639, G11.42.1 Gila, 2001, Phys. Stat. Solidi, A188, 239, 10.1002/1521-396X(200111)188:1<239::AID-PSSA239>3.0.CO;2-D Hong, 2000, J. Vac. Sci. Technol. B, 18, 1453, 10.1116/1.591402 Irokawa, 2002, Solid State Electron., 46, 1467, 10.1016/S0038-1101(02)00086-2 Nakano, 2003, J. Vac. Sci. Techol., B21, 2220, 10.1116/1.1612937 Fu, 2002, Appl. Phys. Lett., 80, 446, 10.1063/1.1436279 Mehandru, 2002, Electrochem. Solid State Lett., 5, G51, 10.1149/1.1479298 Irokawa, 2003, Appl. Phys. Lett., 83, 4987, 10.1063/1.1634382 Shur, 1990 Cho, 2003, Solid State Electron., 47, 1597, 10.1016/S0038-1101(03)00090-X Ren, 1996, Tech. Dig. Int. Electron. Dev. Meet., 943, 10.1109/IEDM.1996.554137