Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices

Materials Science and Engineering: R: Reports - Tập 44 - Trang 151-184 - 2004
B.P. Gila1, F. Ren2, C.R. Abernathy3
1Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
2Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
3Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA

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Materials Science and Engineering: R: Reports

Tập 44

151-184

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