Field‐Induced n‐Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Advanced Functional Materials - Tập 27 Số 38 - 2017
Yi‐Jun Xu1,2, Jian Yuan3, Kai Zhang1, Yuan Hou1, Qiu Sun4, Yingming Yao5, Shaojuan Li3, Qiaoliang Bao6, Han Zhang2, Yuegang Zhang1,7
1CAS Key Laboratory of Nano‐Bio Interface, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics Chinese Academy of Sciences 398 Ruoshui Road Suzhou 215123 Jiangsu P. R. China
2Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060 P. R. China
3Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123 Jiangsu, P. R. China
4College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, 225002, P.R. China
5Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Dushu Lake Campus, Soochow University, Suzhou, 215123 P. R. China
6Department of Materials Science and Engineering, Faculty of Engineering, Monash University, Clayton, 3800 Victoria, Australia
7Department of Physics, Tsinghua University, Beijing 100084, P.R. China

Tóm tắt

Black phosphorus (BP) has been considered as a promising two‐dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole‐transport‐dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong field‐induced effect from the K+ center of the silicon nitride (SixNy). An obvious change from pristine p‐type BP to n type is observed after the deposit of the SixNy on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as ~176 cm2 V–1 s–1. Moreover, high‐performance in‐plane BP p‐n diode and further logic inverter were realized by utilizing the n‐doping approach. The BP p‐n diode exhibits a high rectifying ratio of ~104. And, a successful transfer of the output voltage from “High” to “Low” with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP‐based nanoelectronics.

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Advanced Functional Materials

Tập 27 Số 38

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