Large‐Size Ultrathin α‐Ga2S3 Nanosheets toward High‐Performance Photodetection

Advanced Functional Materials - Tập 31 Số 6 - 2021
Yulin Zheng1, Xin Tang1, Wenliang Wang2, Ling Jin3, Guoqiang Li2
1State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
2State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640 China
3Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China

Tóm tắt

AbstractFollowing the extensive researches of graphene, 2D layered semiconductors have attracted widespread attention for their intriguing physical properties. 2D α‐Ga2S3 as an important member of group IIIA–VIA semiconductors has outstanding optoelectronic properties. However, the controllable large‐size synthesis of ultrathin α‐Ga2S3 nanosheets still remains a huge challenge. In this paper, a large‐size ultrathin nanosheets of hexagonal Ga2S3 is prepared via an improved chemical vapor deposition method. High‐performance photodetectors based on the ultrathin Ga2S3 nanosheets is demonstrated. The device shows a high photosensitivity/detectivity (9.2 A W−1/1.4 × 1012 Jones) and a fast response time (rise/fall time of <4/3 ms), respectively. Strikingly, wearable flexible photodetectors based on Ga2S3 nanosheets are fabricated accordingly and demonstrate great response performance and stability. This work provides a new direction for 2D semiconductors to apply in next‐generation nanoscale smart optoelectronics.

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Advanced Functional Materials

Tập 31 Số 6

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