Epitaxy of AIN and GaN thin films on silicon or sapphire for the development of high frequency saw devices

Annales de Chimie Science des Matériaux - Tập 26 - Trang 177-182 - 2001
F. Semond1, D. Schenck1, M. Jibard1, S. Camou2, T. Pastureaud2, A. Soufyane2, Sylvain Ballandras2
1CRHEA CNRS, Sophia Antipolis, France
2LPMO UPR3203 CNRS associé à l'Université Franche-Comté, Besançon, France