New Highly Reliable Optical Transmitting Modules Based on High-Power Superluminescent Diodes in the Spectral Range of 1.5–1.6 μm
Tóm tắt
We report the fabrication of 1.5–1.6 μm light-emitting modules based on an AlGaInAs/InP heterostructure with strain-compensated quantum wells in new, smaller, thermally stabilized housings. Their performance is tested under extreme operating conditions. The reliability of such modules and stability under the influence of climatic factors is studied.
Tài liệu tham khảo
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