Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

Materials Science in Semiconductor Processing - Tập 16 - Trang 923-927 - 2013
Haruo Nakazawa1, Masaaki Ogino1, Hideaki Teranishi1, Yoshikazu Takahashi1, Hitoshi Habuka2
1Electronic Device Laboratory, Corporate R&D Headquarters, Fuji Electric Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano 390-0821, Japan
2Department of Chemical and Energy Engineering, Yokohama National University, 79-5, Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501, Japan

Tài liệu tham khảo

Float Zone Wafers, 〈http://www.sehamerica.com/products/product_float_zone.asp〉 Japan Patent, No. 4367213. H. Nakazawa, M. Ogino, H. Teranishi, Y. Takahashi, H. Habuka, Proceedings of the 6th International Symposium on Advanced Science and Technology of Silicon Materials, Kona, Hawaii, USA, November 19–23, 2012, pp. 119–122. Abe, 1966, Japanese Journal of Applied Physics, 5, 458, 10.1143/JJAP.5.458 Abe, 1966, Japanese Journal of Applied Physics, 5, 979, 10.1143/JJAP.5.979 Foll, 1975, Journal of Applied Physics, 8, 319, 10.1007/BF00898366 Petroff, 1975, Journal of Crystal Growth, 30, 117, 10.1016/0022-0248(75)90210-9 Habu, 1993, Japanese Journal of Applied Physics, 32, 1754, 10.1143/JJAP.32.1754 Tan, 1977, Applied Physics Letters, 70, 1715, 10.1063/1.118652 Tan, 1985, Applied Physics A, 37, 1, 10.1007/BF00617863 Fan, 2000, Journal of Crystal Growth, 213, 276, 10.1016/S0022-0248(00)00350-X Kajiwara, 2005, Japanese Journal of Applied Physics, 44, 4211, 10.1143/JJAP.44.4211 Kimura, 1995, Materials Science Forum, 196–201, 1743, 10.4028/www.scientific.net/MSF.196-201.1743 H. Fujimori, K. Kashima, H. Shirai, T. Okabe, Proceedings of the 3rd Forum on the Science and Technology of Silicon Materials 2001, Shonan Village Center, Kanagawa, Japan, November 26–28, 2001, pp. 138–151. Matsushita, 1980, Japanese Journal of Applied Physics, 19, L101, 10.1143/JJAP.19.L101 Lang, 1958, Journal of Applied Physics, 29, 597, 10.1063/1.1723234 Lang, 1957, Acta Metallurgica, 5, 358, 10.1016/0001-6160(57)90002-0 Itoh, 1988, Applied Physics Letters, 53, 39, 10.1063/1.100116 Seto, 2004, Materials Science and Engineering: B, 114–115, 334, 10.1016/j.mseb.2004.07.057 Grove, 1967