Effect of heat treatment on electrical and surface properties of tungsten oxide thin films grown by HFCVD technique

Materials Science in Semiconductor Processing - Tập 122 - Trang 105506 - 2021
Guang-Lei Tan1, Dan Tang1, Davoud Dastan2, Azadeh Jafari3, José P.B. Silva4, Xi-Tao Yin5
1School of Materials Science and Engineering, Yingkou Institute of Technology, Yingkou, Liaoning Province, 115014, China
2School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
3South Ural State University, 76, Lenin Aven., Chelyabinsk 454080, Russia
4Centre of Physics of University of Minho and Porto (CF-UM-UP), Campus de Gualtar, 4710-057, Braga, Portugal
5School of Physics and Optoelectronic Engineering, Ludong University, Yantai, Shandong Province, 264000, China

Tài liệu tham khảo

Jitan, 2020, Catalysts, 10, 227, 10.3390/catal10020227 Dastan, 2017, Appl. Phys. A, 123, 1 Sun, 2020, J. Mater. Chem. C, 8, 10257, 10.1039/D0TC01801E Tao, 2020, Appl. Surf. Sci., 530, 10.1016/j.apsusc.2020.147265 Yang, 2020, Compos. Part A, 131 Yin, 2020, Sensor. Actuator. B Chem., 319, 10.1016/j.snb.2020.128330 Shan, 2020, Dalton Trans., 49, 8549, 10.1039/D0DT01159B Bhowmik, 2020, Appl. Surf. Sci., 501, 10.1016/j.apsusc.2019.144224 Yin, 2019, J. Alloys Compd., 805, 229, 10.1016/j.jallcom.2019.07.081 Shakoury, 2020, Opt. Quant. Electron., 52, 270, 10.1007/s11082-020-02388-4 Zhou, 2020, J. Mater. Sci. Mater. Electron. Jafari, 2016, Inorg. Organomet. Polym. Mater., 26, 254, 10.1007/s10904-015-0291-5 Sun, 2020, J. Mater. Chem. A, 8, 5750, 10.1039/D0TA00903B Bujji Babu, 2020, Phys. B Condens. Matter, 584 Yin, 2020, J. Alloys Compd., 825, 10.1016/j.jallcom.2020.154105 Shan, 2020, Dalton Trans., 49, 6682, 10.1039/D0DT00496K Djaoued, 2012, J. Nanomater., 2012, 1, 10.1155/2012/674168 Zhou, 2020, Nanomaterials, 10, 785, 10.3390/nano10040785 ÇınarDemir, 2020, Ceram. Int., 46, 4358, 10.1016/j.ceramint.2019.10.159 Zhu, 2019, Compos. Part A, 125, 10.1016/j.compositesa.2019.105521 Migas, 2010, J. Appl. Phys., 108 Zou, 2014, J. Alloys Compd., 583, 465, 10.1016/j.jallcom.2013.08.166 Bourdin, 2019, Nanomaterials, 9, 1555, 10.3390/nano9111555 Zheng, 2011, Adv. Funct. Mater., 21, 2175, 10.1002/adfm.201002477 Jafari, 2019, J. Mater. Sci. Mater. Electron., 30, 21185, 10.1007/s10854-019-02492-6 Hoel, 2004, Curr. Appl. Phys., 4, 547, 10.1016/j.cap.2004.01.016 Dastan, 2016, J. Mater. Sci. Mater. Electron., 28, 3851, 10.1007/s10854-016-5997-9 Nimittrakoolchai, 2008, Mater. Chem. Phys., 112, 270, 10.1016/j.matchemphys.2008.05.049 Binions, 2008, Chem. Vap. Depos., 14, 33, 10.1002/cvde.200706641 Piccirillo, 2007, Chem. Vap. Depos., 13, 145, 10.1002/cvde.200606540 Lim, 2002, Chem. Mater., 14, 1548, 10.1021/cm010590f Ashraf, 2007, Polyhedron, 26, 1493, 10.1016/j.poly.2006.11.017 Kaushal, 2011, J. Nanoparticle Res., 13, 2485, 10.1007/s11051-010-0141-x Bittencourt, 2002, J. Electrochem. Soc., 149, H81, 10.1149/1.1448821 Bittencourt, 2002, Semicond. Sci. Technol., 17, 522, 10.1088/0268-1242/17/6/304 Ohring, 1992 Miranda, 2018, Acta Crystallogr., A74, 54 Fathinezhad, 2020, Environ. Nanotechnol. Monit. Management, 14 Terohid, 2018, Appl. Phys. A, 124, 567, 10.1007/s00339-018-1955-0 Jafari, 2020, Surf. Interfac., 18 Jafari, 2016, J. Inorg. Organomet. Polym. Mater., 26, 384, 10.1007/s10904-016-0328-4 Shim, 2009, Sol. Energy Mater. Sol. Cells, 93, 2062, 10.1016/j.solmat.2009.02.008 Kumar, 2011, Small, 7, 2173, 10.1002/smll.201100458 Batool, 2019, J. Alloys Compd., 780, 653, 10.1016/j.jallcom.2018.11.392 Rehman, 2020, J. Electrochem. Energy Convers. Storage, 17, 10.1115/1.4043490 Vemuri, 2012, ACS Appl. Mater. Interfaces, 4, 1371, 10.1021/am2016409 Buch, 2018, Surf. Sci. Nanotech., 16, 289, 10.1380/ejssnt.2018.289 Liu, 2019, Tribol. Int., 140 Lethy, 2008, Appl. Phys. A, 91, 637, 10.1007/s00339-008-4492-4 Chawla, 2008, Thin Solid Films, 517, 1042, 10.1016/j.tsf.2008.06.068 Carl, 1996, Thompson Roland Carel, J. Mech. Phys. Solid., 4, 657 Pagnier, 2007, J. Raman Spectroscopy, 38, 756, 10.1002/jrs.1687 Boulova, 2002, J. Solid State Chem., 167, 425, 10.1016/S0022-4596(02)99649-0 Pardanaud, 2020, Nucl. Fusion Gazzoli, 1997, J. Phys. Chem. B, 101, 10.1021/jp971999o Lin, 2005, Thin Solid Films, 101, 492 Kong, 2009, Mater. Sci. Eng., A, 522, 128, 10.1016/j.msea.2008.09.118 Khumtong, 2017, J. Electron. Mater., 46, 3166, 10.1007/s11664-017-5303-5 Altaf, 2021, Renew. Energy, 164, 709, 10.1016/j.renene.2020.09.104 Gillet, 2003, Surf. Sci., 532–535, 519, 10.1016/S0039-6028(03)00477-1 Gillet, 2004, Thin Solid Films, 467, 239, 10.1016/j.tsf.2004.04.018 Altaf, 2020, J. Environ. Chem. Eng., 8, 10.1016/j.jece.2020.104118 Gillet, 2004, Thin Solid Films, 467, 10.1016/j.tsf.2004.04.018 Leng, 2017, NPJ Quantum Mater., 2, 35, 10.1038/s41535-017-0039-2 Song, 2002, Mater. Lett., 56, 832, 10.1016/S0167-577X(02)00623-7 Xu, 2007, Chin. J. Mech. Eng., 43, 21, 10.3901/JME.2007.06.021
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Materials Science in Semiconductor Processing

Tập 122

105506

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