The growth by MOCVD of low-doped p-Type GaAs using a dimethylzinc adduct

Journal of Crystal Growth - Tập 91 - Trang 63-66 - 1988
P.J. Wright1, B. Cockayne1
1Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcs. WR14 3PS, UK

Tài liệu tham khảo

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