A flexible Hf0.5Zr0.5O2 thin film with highly robust ferroelectricity

Wang, 2022, Multilayer flexible electronics: manufacturing approaches and applications, Mater Today Phys, 23 Sreenilayam, 2021, MXene materials based printed flexible devices for healthcare, biomedical and energy storage applications, Mater Today, 43, 99, 10.1016/j.mattod.2020.10.025 Prunet, 2021, A review on conductive polymers and their hybrids for flexible and wearable thermoelectric applications, Mater Today Phys, 18 Cheng, 2022, Flexible multiferroic heterostructure based on freestanding single-crystalline BaTiO3 membranes for spintronic devices, Adv Electron Mater, 8, 10.1002/aelm.202100923 Li, 2022, Ferroelectric domain control of nonlinear light polarization in MoS2 via PbZr0.2Ti0.8O3 thin films and free-standing membranes, Adv Mater, 35 He, 2022, An optical/ferroelectric multiplexing multidimensional nonvolatile memory from ferroelectric polymer, Adv Mater, 34, 10.1002/adma.202202181 Peng, 2021, Enabling large memory window and high reliability for FeFET memory by integrating AlON interfacial layer, Appl Phys Lett, 118, 10.1063/5.0036824 Wen, 2020, Ferroelectric tunnel junctions: modulations on the potential barrier, Adv Mater, 32, 10.1002/adma.201904123 Luo, 2022, High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing, Nat Commun, 13, 699, 10.1038/s41467-022-28303-x Liu, 2022, Flexible multi-state nonvolatile antiferroelectric memory, J Am Ceram Soc, 105, 6232, 10.1111/jace.18585 Cheema, 2020, Enhanced ferroelectricity in ultrathin films grown directly on silicon, Nature, 580, 478, 10.1038/s41586-020-2208-x Schroeder, 2022, The fundamentals and applications of ferroelectric HfO2, Nat Rev Mater, 7, 653, 10.1038/s41578-022-00431-2 Cheema, 2022, Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors, Nature, 604, 65, 10.1038/s41586-022-04425-6 Yun, 2022, Intrinsic ferroelectricity in Y-doped HfO2 thin films, Nat Mater, 21, 903, 10.1038/s41563-022-01282-6 Luo, 2022, Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition, J Materiomics, 8, 311, 10.1016/j.jmat.2021.09.005 Yu, 2017, Flexible inorganic ferroelectric thin films for nonvolatile memory devices, Adv Funct Mater, 27, 10.1002/adfm.201700461 Luo, 2021, Sub-thermionic, ultra-high-gain organic transistors and circuits, Nat Commun, 12, 1928, 10.1038/s41467-021-22192-2 Hsain, 2018, Enhanced piezoelectricity of thin film hafnia-zirconia (HZO) by inorganic flexible substrates, Appl Phys Lett, 113, 10.1063/1.5031134 Chen, 2022, Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility, Nano Res, 15, 2913, 10.1007/s12274-021-3896-8 Liu, 2020, Flexible quasi-van der Waals ferroelectric hafnium-based oxide for integrated high-performance nonvolatile memory, Adv Sci, 7, 10.1002/advs.202001266 Liu, 2020, Highly stable performance of flexible Hf0.6Zr0.4O2 ferroelectric thin films under multi-service conditions, J Mater Chem C, 8, 3878, 10.1039/C9TC05157K Xiao, 2019, Thermally stable and radiation hard ferroelectric Hf0.5Zr0.5O2 thin films on muscovite mica for flexible nonvolatile memory applications, ACS Appl Electron Mater, 1, 919, 10.1021/acsaelm.9b00107 Joh, 2022, Flexible ferroelectric hafnia-based synaptic transistor by focused-microwave annealing, ACS Appl Mater Interfaces, 14, 1326, 10.1021/acsami.1c16873 Liu, 2022, Excellent HZO ferroelectric thin films on flexible PET substrate, J Alloys Compd, 919, 10.1016/j.jallcom.2022.165872 Zhong, 2022, Large-scale Hf0.5Zr0.5O2 membranes with robust ferroelectricity, Adv Mater, 34, 10.1002/adma.202109889 Liu, 2016, Van der Waals heterostructures and devices, Nat Rev Mater, 1, 10.1038/natrevmats.2016.42 Sun, 2020, BiFeO3-based flexible ferroelectric memristors for neuromorphic pattern recognition, ACS Appl Electron Mater, 2, 1081, 10.1021/acsaelm.0c00094 Sun, 2022, A flexible BiFeO3-based ferroelectric tunnel junction memristor for neuromorphic computing, J Materiomics, 8, 144, 10.1016/j.jmat.2021.04.009 Mikolajick, 2022, From ferroelectric material optimization to neuromorphic devices, Adv Mater Tahara, 2021, Strategy toward HZO BEOL-FeRAM with low-voltage operation (≤1.2 V), low process temperature, and high endurance by thickness scaling, 1 Park, 2015, Ferroelectricity and antiferroelectricity of doped thin HfO2-based films, Adv Mater, 27, 1811, 10.1002/adma.201404531 Wei, 2018, A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films, Nat Mater, 17, 1095, 10.1038/s41563-018-0196-0 Muller, 2012, Ferroelectricity in simple binary ZrO2 and HfO2, Nano Lett, 12, 4318, 10.1021/nl302049k Park, 2013, Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature, Appl Phys Lett, 102 Gaddam, 2020, Insertion of HfO2 seed/dielectric layer to the ferroelectric HZO films for heightened remanent polarization in MFM capacitors, IEEE Trans Electron Dev, 67, 745, 10.1109/TED.2019.2961208 Kashir, 2021, Hf1-xZrxO2/ZrO2 nanolaminate thin films as a high-kappa dielectric, ACS Appl Electron Mater, 3, 5632, 10.1021/acsaelm.1c01105 Kashir, 2021, Towards an ideal high-kappa HfO2-ZrO2-based dielectric, Nanoscale, 13, 13631, 10.1039/D1NR02272E Zhou, 2013, Wake-up effects in Si-doped hafnium oxide ferroelectric thin films, Appl Phys Lett, 103, 10.1063/1.4829064 Fields, 2020, Phase-exchange-driven wake-up and fatigue in ferroelectric hafnium zirconium oxide films, ACS Appl Mater Interfaces, 12, 26577, 10.1021/acsami.0c03570 Lederer, 2021, On the origin of wake-up and antiferroelectric-like behavior in ferroelectric hafnium oxide, Phys Status Solidi Rapid Res Lett, 15, 10.1002/pssr.202170022 Luo, 2020, A highly CMOS compatible hafnia-based ferroelectric diode, Nat Commun, 11, 1391, 10.1038/s41467-020-15159-2 Chernikova, 2018, Improved ferroelectric switching endurance of La-doped Hf0.5Zr0.5O2 thin films, ACS Appl Mater Interfaces, 10, 2701, 10.1021/acsami.7b15110 Chai, 2012, Intrinsic ferroelectric polarization of orthorhombic manganites with E-type spin order, Phys Rev B, 85, 10.1103/PhysRevB.85.184406 Park, 2018, Morphotropic phase boundary of Hf1-xZrxO2 thin films for dynamic random access memories, ACS Appl Mater Interfaces, 10, 42666, 10.1021/acsami.8b15576 Jiuren, 2021, Al-doped and deposition temperature-engineered HfO2 near morphotropic phase boundary with record dielectric permittivity (∼68), 13.04.01 Das, 2022, Sub 5 Å-EOT HfxZr1–xO2 for next-generation DRAM capacitors using morphotropic phase boundary and high-pressure (200 atm) annealing with rapid cooling process, IEEE Trans Electron Dev, 69, 103, 10.1109/TED.2021.3131403 Kim, 2016, A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement, Nanoscale, 8, 1383, 10.1039/C5NR05339K Chouprik, 2019, Wake-up in a Hf0.5Zr0.5O2 film: a cycle-by-cycle emergence of the remnant polarization via the domain depinning and the vanishing of the anomalous polarization switching, ACS Appl Electron Mater, 1, 275, 10.1021/acsaelm.8b00046 Mao, 2017, Mechanical analyses and structural design requirements for flexible energy storage devices, Adv Energy Mater, 7, 10.1002/aenm.201700535 Cao, 2019, Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode, IEEE Electron Device Lett, 40, 1744, 10.1109/LED.2019.2944960 Kim, 2021, Method to achieve the morphotropic phase boundary in HfxZr1-xO2 by electric field cycling for DRAM cell capacitor applications, IEEE Electron Device Lett, 42, 517, 10.1109/LED.2021.3059901 Gaddam, 2022, Novel approach to high κ (∼59) and low EOT (∼3.8 Å) near the morphotrophic phase boundary with AFE/FE (ZrO2/HZO) bilayer heterostructures and high-pressure annealing, ACS Appl Mater Interfaces, 14, 43463, 10.1021/acsami.2c08691 Kim, 2005, Polarization relaxation induced by a depolarization field in ultrathin ferroelectric BaTiO3 capacitors, Phys Rev Lett, 95, 10.1103/PhysRevLett.95.237602 Lyu, 2020, High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films, Nanoscale, 12, 11280, 10.1039/D0NR02204G Li, 2023, High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM, Appl Phys Lett, 122 Kohlstedt, 2005, Current status and challenges of ferroelectric memory devices, Microelectron Eng, 80, 296, 10.1016/j.mee.2005.04.084 Tagantsev, 2001, Polarization fatigue in ferroelectric films: basic experimental findings, phenomenological scenarios, and microscopic features, J Appl Phys, 90, 1387, 10.1063/1.1381542 Pesic, 2016, Physical mechanisms behind the field-cycling behavior of HfO2-based ferroelectric capacitors, Adv Funct Mater, 26, 4601, 10.1002/adfm.201600590