Electronic properties of etched–regrown heterostructure interfaces

Journal of Crystal Growth - Tập 251 - Trang 96-100 - 2003
S. Beyer1, S. Löhr1, Ch. Heyn1, D. Heitmann1, W. Hansen1
1Institut für Angewandte Physik, IAP, Universität Hamburg, Jungiusstraße 11, D-20355 Hamburg, Germany

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