Ge ion implantation in Si for the fabrication of Si/GexSi1-x heterojunction transistors

Ashburn, 1993, 301 Bean, 1984, Appl. Phys. Lett., 44, 102, 10.1063/1.94571 Tatsumi, 1988, Appl. Phys. Lett., 52, 895, 10.1063/1.99265 Meyerson, 1988, Appl. Phys. Lett., 53, 2555, 10.1063/1.100206 de Boer, 1991, Appl. Phys. Lett., 58, 1286, 10.1063/1.104338 Crabbe, 1993, Tech. Dig. IEDM '93, 83 King, 1989, IEEE Electron Device Lett., 10, 52, 10.1109/55.32426 Iyer, 1989, IEEE Trans. Electron Devices, 36, 2043, 10.1109/16.40887 Grahn, 1993, Electron. Lett., 29, 1621, 10.1049/el:19931080 Fukami, 1990, Appl. Phys. Lett., 57, 2345, 10.1063/1.103888 Fukami, 1991, Microelectron. Eng., 15, 15, 10.1016/0167-9317(91)90173-B Gupta, 1993, J. Electron. Mater., 22, 125, 10.1007/BF02665734 Fathy, 1987, Appl. Phys. Lett., 51, 1337, 10.1063/1.98671 Raineri, 1995, 469 V. Raineri, S. Lombardo, F. La Via and F. Iacona, Nucl. Instrum. Methods B, in press. Beadle, 1985 Jones, 1991, J. Appl. Phys., 69, 2931, 10.1063/1.348603 Lombardo, 1993, Appl. Phys. Lett., 62, 2335, 10.1063/1.109409 Lombardo, 1996, J. Appl. Phys., 79, 3456, 10.1063/1.362563 Biersack, 1980, Nucl. Instrum. Methods, 174, 257, 10.1016/0029-554X(80)90440-1