An Ultrahigh Responsivity (9.7 mA W−1) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga2O3 Heterostructures

Advanced Functional Materials - Tập 27 Số 17 - 2017
Bin Zhao1, Wei Wang2, Hongyu Chen1, Lingxia Zheng1, Longxing Su1, Dongxu Zhao2, Xiaosheng Fang1
1Department of Materials Science, Fudan University Shanghai, 200433, P. R. China
2State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, P. R. China

Tóm tắt

Highly crystallized ZnO–Ga2O3 core–shell heterostructure microwire is synthesized by a simple one‐step chemical vapor deposition method, and constructed into a self‐powered solar‐blind (200–280 nm) photodetector with a sharp cutoff wavelength at 266 nm. The device shows an ultrahigh responsivity (9.7 mA W−1) at 251 nm with a high UV/visible rejection ratio (R251 nm/R400 nm) of 6.9 × 102 under zero bias. The self‐powered device has a fast response speed with rise time shorter than 100 µs and decay time of 900 µs, respectively. The ultrahigh responsivity, high UV/visible rejection ratio, and fast response speed make it highly suitable in practical self‐powered solar‐blind detection. Additinoally, this microstructure heterojunction design method would provide a new approach to realize the high‐performance self‐powered photodetectors.

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Advanced Functional Materials

Tập 27 Số 17

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