Non-linear optical generation in Ga1−yAlyAs/GaAs/Ga1−xAlxAs quantum V-grooves: The effects of temperature and hydrostatic pressure

Eugenio Giraldo-Tobón1,2, Guillermo L. Miranda1, M.R. Fulla2,3
1Universidad EIA, Envigado, Colombia
2Escuela de Física, Universidad Nacional de Colombia, AA 3840 Medellín, Colombia
3Institución Universitaria Pascual Bravo, AA 6564 Medellín, Colombia

Tài liệu tham khảo

Esaki, 1970, Superlattice and negative differential conductivity in semiconductors, IBM J. Res. Dev., 14, 61, 10.1147/rd.141.0061 Tsu, 1973, Tunneling in a finite superlattice, Appl. Phys. Lett., 22, 562, 10.1063/1.1654509 Figarova, 2016, Negative differential conductivity in quantum well with complex potential profile for electron-phonon scattering, Phys. E Low Dimens. Syst. Nanostruct., 78, 10, 10.1016/j.physe.2015.11.036 Restrepo, 2010, Electronic states in double quantum well-wires with potential w-profile: combined effects of hydrostatic pressure and electric field, J. Mater. Sci., 45, 10.1007/s10853-010-4334-6 Restrepo, 2009, Hydrogenic donor impurity in parallel-triangular quantum wires: hydrostatic pressure and applied electric field effects, Phys. B Condens. Matter, 404, 5163, 10.1016/j.physb.2009.08.282 Schulman, 1986, Ga1−xAlxAs-Ga1−yAlyAs-GaAs double-barrier structures, J. Appl. Phys., 60, 3954, 10.1063/1.337517 Koshiba, 1994, Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates, Appl. Phys. Lett., 64, 363, 10.1063/1.111967 Inoshita, 1996, Electronic structure of the ridge quantum wire based on an analytic confinement model, J. Appl. Phys., 79, 269, 10.1063/1.360941 Arimoto, 2009, Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates, J. Cryst. Growth, 311, 814, 10.1016/j.jcrysgro.2008.09.062 Piester, 2000, Laser-action in v-groove-shaped InGaAs-InP single quantum wires, IEEE J. Sel. Top. Quantum Electron., 6, 522, 10.1109/2944.865107 Sirigu, 2000, Lasing via ground-subband transitions in V-groove quantum wire lasers, Phys. E Low Dimens. Syst. Nanostruct., 7, 513, 10.1016/S1386-9477(99)00368-9 Son, 2000, Constant growth of V-groove AlGaAs/GaAs multilayers on submicron gratings for complex optical devices, J. Cryst. Growth, 221, 201, 10.1016/S0022-0248(00)00686-2 Fu, 2001, Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire, J. Appl. Phys., 89, 2351, 10.1063/1.1339857 Carron, 2011, Dilute nitride InGaAsN/GaAs V-groove quantum wires emitting at 1.3 μm wavelength at room temperature, Appl. Phys. Lett., 99, 10.1063/1.3610950 Felici, 2012, Magneto-optical properties of single site-controlled InGaAsN quantum wires grown on prepatterned GaAs substrates, Phys. Rev. B, 85, 10.1103/PhysRevB.85.155319 Felici, 2012, Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires, Appl. Phys. Lett., 101, 10.1063/1.4758685 Li, 2017, Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer, Appl. Phys. Lett., 111, 10.1063/1.5000100 Kaluza, 2000, On the choice of precursors for the MOVPE-growth of high-quality Al0.30Ga0.70As/GaAs v-groove quantum wires with large subband spacing, J. Cryst. Growth, 221, 91, 10.1016/S0022-0248(00)00655-2 Lu, 2001, Carrier transfer between V-grooved quantum wire and vertical quantum well, Phys. Lett. A, 280, 77, 10.1016/S0375-9601(01)00022-6 Kim, 1999, Fabrication of uniform InGaAs/GaAs quantum wires on V-grooved substrate by chemical beam epitaxy, J. Cryst. Growth, 201–202, 828, 10.1016/S0022-0248(98)01450-X Leifer, 2002, Quantitative imaging of InGaAs/GaAs layers using transmission electron microscopy methods: characterization of stresses and chemical composition, J. Cryst. Growth, 237–239, 1471, 10.1016/S0022-0248(01)02297-7 Steer, 1998, Optical spectroscopy of GaAsAlGaAs v-groove quantum wires, Phys. E Low Dimens. Syst. Nanostruct., 2, 949, 10.1016/S1386-9477(98)00194-5 Stier, 1998, First observation of symmetry breaking in strained In0.7Ga0.3As/InP V-groove quantum wires, Phys. E Low Dimens. Syst. Nanostruct., 2, 969, 10.1016/S1386-9477(98)00199-4 Cade, 2004, Carrier relaxation in GaAs v-groove quantum wires and the effects of localization, Phys. Rev. B, 70, 10.1103/PhysRevB.70.195308 Cade, 2005, Longitudinal photocurrent spectroscopy of a single GaAs/AlGaAs v-groove quantum wire, Nanotechnology, 16, 307, 10.1088/0957-4484/16/2/023 Tsukernik, 2001, Quantum magnetotransport in periodic V-grooved heterojunctions, Phys. Rev. B, 63, 10.1103/PhysRevB.63.153315 Tsurumachi, 2002, High-density V-groove InGaAs/AlGaAs quantum wires on submicron gratings by constant growth technique, J. Cryst. Growth, 237–239, 1486, 10.1016/S0022-0248(01)02359-4 Bouazra, 2015, Application of coordinate transformation and finite differences method for electron and hole states calculations, Phys. E Low Dimens. Syst. Nanostruct., 65, 93, 10.1016/j.physe.2014.08.011 Creci, 1999, Electron and hole states in V-groove quantum wires: an effective potential calculation, Semicond. Sci. Technol., 14, 690, 10.1088/0268-1242/14/8/304 de Giorgi, 2000, Excitonic and free carrier recombination in InxGa1xAs/GaAs V-shaped quantum wire for different in content, Phys. Status Solidi (a), 178, 243, 10.1002/1521-396X(200003)178:1<243::AID-PSSA243>3.0.CO;2-1 Goldoni, 1996, Valence band spectroscopy in vgrooved quantum wires, Appl. Phys. Lett., 69, 2965, 10.1063/1.117745 Khordad, 2010, Simultaneous effects of temperature and pressure on the donor binding energy in a V-groove quantum wire, Superlattices Microstruct., 47, 422, 10.1016/j.spmi.2010.01.002 Khordad, 2010, Effect of pressure on intersubband optical absorption coefficients and refractive index changes in a V-groove quantum wire, Superlattices Microstruct., 47, 538, 10.1016/j.spmi.2010.01.008 Schwarz, 2000, Electron transport in modulation-doped GaAs v-groove quantum wires, Phys. E Low Dimens. Syst. Nanostruct., 7, 760, 10.1016/S1386-9477(00)00053-9 Weber, 2001, Shallow impurities in V-groove quantum wires, Phys. Rev. B, 63, 10.1103/PhysRevB.63.113307 Ferry, 2009 Giraldo-Tobón, 2019, Energy spectrum analysis of a realistic single-electron Ga1−xAlxAs/GaAs/Ga1−xAlxAs quantum V-groove in external electric field, Phys. E Low Dimens. Syst. Nanostruct., 114, 10.1016/j.physe.2019.113652 Dwir, 1999, Electron transport in AlGaAs/GaAs V-groove quantum wires, Phys. B Condens. Matter, 259–261, 1025, 10.1016/S0921-4526(98)00956-9 Reyes-Gómez, 2008, Effects of hydrostatic pressure and aluminum concentration on the conduction-electron g factor in GaAs-(Ga,Al)As quantum wells under in-plane magnetic fields, Phys. Rev. B, 77, 115, 10.1103/PhysRevB.77.115308 Kasapoglu, 2008, The hydrostatic pressure and temperature effects on donor impurities in GaAs∕Ga1−xAlxAs double quantum well under the external fields, Phys. Lett. A, 373, 140, 10.1016/j.physleta.2008.10.080 Culchac, 2009, Hydrostatic pressure effects on electron states in GaAs(Ga, Al)As double quantum rings, J. Appl. Phys., 105, 10.1063/1.3124643 Elabsy, 1994, Effect of the Gamma -X crossover on the binding energies of confined donors in single GaAs∕AlxGa1−xAs quantum-well microstructures, J. Phys. Condens. Matter, 6, 10025, 10.1088/0953-8984/6/46/019 Ehrenreich, 1961, Band structure and transport properties of some 3-5 compounds, J. Appl. Phys., 32, 2155, 10.1063/1.1777035 Zachau, 1986, Electronic transport in molecular-beam-epitaxy-grown AlxGa1−x As, Phys. Rev. B, 33, 8564, 10.1103/PhysRevB.33.8564 Landau, 1977 Johnson, 1987 Ram-Mohan, 2002 Hecht, 2012, New development in freefem++, J. Numer. Math., 20, 251, 10.1515/jnum-2012-0013 Kirak, 2011, The electric field effects on the binding energies and the nonlinear optical properties of a donor impurity in a spherical quantum dot, J. Appl. Phys., 109, 10.1063/1.3582137 Antil, 2019, Pressure dependent optical properties of quantum dot with spin orbit interaction and magnetic field, Optik, 176, 278, 10.1016/j.ijleo.2018.09.010 Baira, 2019, Linear and nonlinear intersubband optical properties of direct band gap GeSn quantum dots, Nanomaterials, 9, 124, 10.3390/nano9010124 Baskoutas, 2006, Effects of excitons in nonlinear optical rectification in semiparabolic quantum dots, Phys. Rev. B, 74, 10.1103/PhysRevB.74.153306 Kavruk, 2014, A detailed investigation of electronic and intersubband optical properties of AlxGa1−xAs/Al0.3Ga0.7As/AlyGa1−yAs/Al0.3Ga0.7As multi-shell quantum dots, J. Phys. D Appl. Phys., 47, 10.1088/0022-3727/47/29/295302 Boyd, 2008 Ahn, 1987, Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field, IEEE J. Quantum Electron., 23, 2196, 10.1109/JQE.1987.1073280 Sakurai, 1994 Harrison, 2016 Miranda-Pedraza, 2017, Nonlinear terahertz response associated to electronic intersubband transitions in a v-groove quantum wire, Phys. Status Solidi B, 254, 10.1002/pssb.201600463