New scope of high pressure-high temperature synthesis of cubic boron nitride

Diamond and Related Materials - Tập 2 - Trang 1409-1413 - 1993
Satoshi Nakano1, Osamu Fukunaga1
1Department of Inorganic Materials, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo, 152, Japan

Tài liệu tham khảo

Bundy, 1963, J. Chem. Phys., 38, 1144, 10.1063/1.1733815 Corrigan, 1975, J. Chem. Phys., 63, 3812, 10.1063/1.431874 Vereshchagin, 1979, Izv. Akad. Nauk. SSSR, Neorg. Mater., 15, 256 Solozhenko, 1988, Zh. Fiz. Khim., 61, 2851 1991, 1051 DeVries, 1972, J. Cryst. Growth, 13–14, 88, 10.1016/0022-0248(72)90068-1 1974, 454 R. H. Wentorf, Jr., US Patent 2,947,617, 2 August, 1960. Endo, 1981, J. Mater. Sci., 16, 2227, 10.1007/BF00542385 Sato, 1981, J. Mater. Sci., 16, 1829, 10.1007/BF00540630 F. R. Corrigan, US Patent 4,188,194, 12 February 1980. 1974, 436 Sumiya, 1983, Mater. Res. Bull., 18, 1203, 10.1016/0025-5408(83)90023-5 Shimomura, 1991, 136 Onodera, 1981, J. Chem. Phys., 74, 5814, 10.1063/1.440895 Hiraguchi, 1991, J. Appl. Crystallogr., 24, 286, 10.1107/S0021889891001334 Nakano, 1992, J. Am. Ceram. Soc., 75, 240, 10.1111/j.1151-2916.1992.tb05477.x Mishima, 1987, J. Appl. Phys., 61, 2822, 10.1063/1.337874 Kagamida, 1989, J. Cryst. Growth, 94, 261, 10.1016/0022-0248(89)90624-6 Iizuka, 1991, 140 Akaishi, 1990, J. Cryst. Growth, 104, 578, 10.1016/0022-0248(90)90159-I E. Iizuka, Ger. Offen. DE 3,241,979, 1983.