Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method

Ngo Ngoc Ha1,2, Atsushi Nishikawa3, Yasufumi Fujiwara4, Tom Gregorkiewicz2
1International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No. 1, Dai Co Viet, Hanoi, Viet Nam
2Van der Waals-Zeeman Institute (WZI), University of Amsterdam (UvA), Science Park 904, 1098XH Amsterdam, The Netherlands
3Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
4Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2–1, Yamadaoka, Suita, Osaka 565-0871, Japan

Tài liệu tham khảo

Zhu, 2007, Rare earth ions doped full-color luminescence glasses for white LED, J. Lumin., 126, 707, 10.1016/j.jlumin.2006.10.028 Steckl, 2001, Multiple color capability from rare earth-doped gallium nitride, Mater. Sci. Eng. B Solid State Mater. Adv. Technol., 81, 97, 10.1016/S0921-5107(00)00745-5 Nyein, 2003, Spectral and time-resolved photoluminescence studies of Eu-doped GaN, Appl. Phys. Lett., 82, 1655, 10.1063/1.1560557 Nishikawa, 2010, Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy, Appl. Phys. Lett., 97, 2010, 10.1063/1.3478011 Park, 2004, Laser action in Eu-doped GaN thin-film cavity at room temperature, Appl. Phys. Lett., 85, 4588, 10.1063/1.1821630 Park, 2005, Demonstration of a visible laser on silicon using Eu-doped GaN thin films, J. Appl. Phys., 98, 50, 10.1063/1.2037867 Pan, 2003, Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition, Appl. Phys. Lett., 83, 9, 10.1063/1.1590738 Andreev, 2006, Optical transitions in Eu3+ ions in GaN:Eu grown by molecular beam epitaxy, Phys. Rev. B - Condens. Matter Mater. Phys., 73, 3, 10.1103/PhysRevB.73.195203 Binnemans, 2015, Interpretation of europium(III) spectra, Coord. Chem. Rev., 295, 1, 10.1016/j.ccr.2015.02.015 Fleischman, 2009, Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy, Appl. Phys. B Lasers Opt., 97, 607, 10.1007/s00340-009-3605-x Woodward, 2011, Excitation of Eu3+ in gallium nitride epitaxial layers: majority versus trap defect center, Appl. Phys. Lett., 98, 6, 10.1063/1.3533806 de Boer, 2014, Optical excitation and external photoluminescence quantum efficiency of Eu(3+) in GaN, Sci. Rep., 4, 5235, 10.1038/srep05235 Nishikawa, 2009, Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection, Appl. Phys. Express, 2, 2 Shaklee, 1973, Optical gain in semiconductors, J. Lumin., 7, 284, 10.1016/0022-2313(73)90072-0 Ha, 2010, Optical gain of the 1.54 μ emission in MBE-grown Si:Er nanolayers, Phys. Rev. B, 81, 195206, 10.1103/PhysRevB.81.195206 Ha, 2012 Thanh, 2015, Correlation between SnO2 nanocrystals and optical properties of Eu3+ ions in SiO2 matrix: relation of crystallinity, composition, and photoluminescence, J. Lumin., 163, 28, 10.1016/j.jlumin.2015.03.002 Thao, 2000, Photoluminescence of erbium-doped silicon: excitation power and temperature dependence, J. Appl. Phys., 88, 1443, 10.1063/1.373837