A Facet‐Dependent Schottky‐Junction Electron Shuttle in a BiVO4{010}–Au–Cu2O Z‐Scheme Photocatalyst for Efficient Charge Separation

Advanced Functional Materials - Tập 28 Số 31 - 2018
Chenguang Zhou1, Shaomang Wang1, Zong‐Yan Zhao2, Zhan Shi1, Shicheng Yan1, Zhigang Zou3,4
1Eco-materials and Renewable Energy Research Center (ERERC) Collaborative Innovation Center of Advanced Microstructures College of Engineering and Applied Sciences Nanjing University No. 22, Hankou Road Nanjing Jiangsu 210093 P. R. China
2Faculty of Materials Science and Engineering Kunming University of Science and Technology No. 61 Wenchang Road Kunming Yunnan 650093 P. R. China
3Jiangsu Key Laboratory for Nano Technology National Laboratory of Solid State Microstructures Department of Physics Nanjing University No. 22, Hankou Road Nanjing Jiangsu 210093 P. R. China
4Macau Institute of Systems Engineering, Macau University of Science and Technology, Macau 999078, P. R. China

Tóm tắt

AbstractInterfacial charge separation and transfer are the main challenges of efficient semiconductor‐based Z‐scheme photocatalytic systems. Here, it is discovered that a Schottky junction at the interface between the BiVO4 {010} facet and Au is an efficient electron‐transfer route useful for constructing a high‐performance BiVO4{010}–Au–Cu2O Z‐scheme photocatalyst. Spectroscopic and computational studies reveal that hot electrons in BiVO4 {010} more easily cross the Schottky barrier to expedite the migration from BiVO4 {010} to Au and are subsequently captured by the excited holes in Cu2O. This crystal‐facet‐dependent electron shuttle allows the long‐lived holes and electrons to stay in the valence band of BiVO4 and conduction band of Cu2O, respectively, contributing to improved light‐driven CO2 reduction. This unique semiconductor crystal‐facet sandwich structure will provide an innovative strategy for rational design of advanced Z‐scheme photocatalysts.

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Advanced Functional Materials

Tập 28 Số 31

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