Tác động của loại cơ sở silicon lên hiệu suất thiết bị Nb2O5/Si: một câu trả lời phụ thuộc vào phân tích vật lý

Springer Science and Business Media LLC - Tập 52 - Trang 1-16 - 2020
Evan T. Salim1, Jehan A. Saimon1, Marwa K. Abood1,2, Makram A. Fakhri3,4
1Applied Science Department, University of Technology, Baghdad, Iraq
2Energy and Renewable Energies Technology Center, University of Technology, Baghdad, Iraq
3Laser and Optoelectronic Engineering Department, University of Technology, Baghdad, Iraq
4Institute of Nano Electronic Engineering, University Malaysia Perlis, Kangar, Malaysia

Tóm tắt

Công trình này trình bày quá trình lắng đọng Nb2O5 trên nền silicon loại p và n. Phim mỏng Nb2O5 đã được lắng đọng bằng phương pháp kết tủa để chuẩn bị dung dịch và áp dụng kỹ thuật quay để lắng đọng màng, trong đó các điều kiện chuẩn bị tối ưu đã được đạt được trong bài báo đã công bố trước đó của chúng tôi. Các đặc tính điện cho thấy tỷ lệ chỉnh lưu tốt khoảng 46,7 cho tiếp giáp Nb2O5/p-Si và 4,9 cho Nb2O5/n-Si. Các yếu tố lý tưởng ước lượng của silicon loại n và p lần lượt là 5,17 và 3,84. Độ nhạy tối đa đã được xác định bằng cách sử dụng cơ sở P-Si và được tìm thấy khoảng 6,2 × 1012 cm Hz1/2 W−1.

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