Transport properties in a gated heterostructure with a trapezoidal Al Ga1−As barrier layer

Physica E: Low-dimensional Systems and Nanostructures - Tập 41 - Trang 1379-1381 - 2009
X.T. Tan1, H.Z. Zheng1, J. Liu1, H. Zhu1, P. Xu1, G.R. Li1, F.H. Yang1
1State Key Laboratory for Microstructures and Superlattices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

Tài liệu tham khảo

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