Proton radiation effects on high-speed silicon Mach-Zehnder modulators for space application

Springer Science and Business Media LLC - Tập 65 - Trang 1-12 - 2022
Changhao Han1, Zhaoyi Hu2, Yuansheng Tao1, Engang Fu2, Yandong He3, Fenghe Yang4, Jun Qin1, Xingjun Wang1,4,5,6
1State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics, Peking University, Beijing, China
2State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing, China
3Institute of Microelectronics, School of Integrated Circuits, Peking University, Beijing, China
4Peking University Yangtze Delta Institute of Optoelectronics, Nantong, China
5Frontier Science Center for Nano-optoelectronics, Peking University, Beijing, China
6Peng Cheng Laboratory, Shenzhen, China

Tóm tắt

In this paper, performance degradation effects on high-speed silicon Mach-Zehnder modulators under proton radiation were investigated for future space environment applications. The test devices were exposed to 3-MeV protons of three fluence levels (5 × 1013, 2 × 1014, and 5 × 1015 ions/cm2), which is comparable to the radiation amount for operating in a harsh space environment after several decades. The performance of the silicon modulator after radiation was characterized in terms of modulation efficiency and eye diagram. The results illustrate that the modulation efficiency is significantly reduced after proton radiation and shows an obvious decrease with increasing radiation fluence. The extinction ratios of the on-off keying (OOK) eye diagram are obviously dropped with increasing radiation fluence and correspond well to modulation efficiency degradation. Furthermore, three representative states for data transmission are demonstrated under three fluences, from still working to the critical state and eventually complete fail. Displacement damage and ionization damage are the two major mechanisms during proton radiation, which lead to the bulk defects and accumulating defect charges and cause performance degradation of silicon Mach-Zehnder modulators.

Tài liệu tham khảo

Reed G T, Mashanovich G, Gardes F Y, et al. Silicon optical modulators. Nat Photon, 2010, 4: 518–526 Shen B T, Shu H W, Zhou L J, et al. A design method for high fabrication tolerance integrated optical mode multiplexer. Sci China Inf Sci, 2020, 63: 160409 Hao Y, Xiang S Y, Han G Q, et al. Recent progress of integrated circuits and optoelectronic chips. Sci China Inf Sci, 2021, 64: 201401 Wang H, Chai H, Lv Z, et al. Silicon photonic transceivers for application in data centers. J Semicond, 2020, 41: 101301 Tao Y, Shu H, Wang X, et al. Hybrid-integrated high-performance microwave photonic filter with switchable response. Photon Res, 2021, 9: 1569–1580 Bai B W, Shu H W, Wang X J, et al. Towards silicon photonic neural networks for artificial intelligence. Sci China Inf Sci, 2020, 63: 160403 Jin M, Tang S J, Chen J H, et al. 1/f-noise-free optical sensing with an integrated heterodyne interferometer. Nat Commun, 2021, 12: 1973 Reed G T, Mashanovich G Z, Gardes F Y, et al. Recent breakthroughs in carrier depletion based silicon optical modulators. Nanophotonics, 2014, 3: 229–245 Dong P, Chen L, Chen Y K. High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators. Opt Express, 2012, 20: 6163–6169 Xiao X, Xu H, Li X, et al. High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization. Opt Express, 2013, 21: 4116–4125 Perez-Galacho D, Bramerie L, Baudot C, et al. QPSK modulation in the O-band using a single dual-drive Mach-Zehnder silicon modulator. J Lightwave Technol, 2018, 36: 3935–3940 Deniel L, Gay M, Galacho D P, et al. DAC-less PAM-4 generation in the O-band using a silicon Mach-Zehnder modulator. Opt Express, 2019, 27: 9740–9748 Patel D, Ghosh S, Chagnon M, et al. Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator. Opt Express, 2015, 23: 14263–14287 Simard A D, Filion B, Patel D, et al. Segmented silicon MZM for PAM-8 transmissions at 114 Gb/s with binary signaling. Opt Express, 2016, 24: 19467–19472 Li M, Wang L, Li X, et al. Silicon intensity Mach-Zehnder modulator for single lane 100 Gb/s applications. Photon Res, 2018, 6: 109–116 He M, Xu M, Ren Y, et al. High-performance hybrid silicon and lithium niobate Mach-Zehnder modulators for 100 Gbit s−1 and beyond. Nat Photonics, 2019, 13: 359–364 Tao Y, Shu H, Jin M, et al. Numerical investigation of the linearity of graphene-based silicon waveguide modulator. Opt Express, 2019, 27: 9013–9031 Datta I, Chae S H, Bhatt G R, et al. Low-loss composite photonic platform based on 2D semiconductor monolayers. Nat Photonics, 2020, 14: 256–262 Wolf S, Zwickel H, Kieninger C, et al. Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices. Opt Express, 2018, 26: 220–232 Lu G W, Hong J, Qiu F, et al. High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications. Nat Commun, 2020, 11: 4224 Du Q, Michon J, Li B, et al. Real-time, in situ probing of gamma radiation damage with packaged integrated photonic chips. Photon Res, 2020, 8: 186–193 Krainak M, Stephen M, Troupaki E, et al. Integrated photonics for NASA applications. In: Proceedings of Conference on Components and Packaging for Laser Systems V, 2019. 10899: 108990F Barnes C, Swift G, Johnston A, et al. Radiation effects considerations for the application of photonics in space systems. In: Proceedings of IEEE Aerospace Conference, 1998. 2: 219–239 Zeiler M, El Nasr-Storey S S, Detraz S, et al. Radiation damage in silicon photonic Mach-Zehnder modulators and photodiodes. IEEE Trans Nucl Sci, 2017, 64: 2794–2801 Oldham T R, McLean F B. Total ionizing dose effects in MOS oxides and devices. IEEE Trans Nucl Sci, 2003, 50: 483–499 Siconolfi S, Mekki J, Oser P, et al. Prediction methodology for proton single event burnout: application to a STRIPFET device. IEEE Trans Nucl Sci, 2015, 62: 2635–2642 Boutillier M, Gauthier-Lafaye O, Bonnefont S, et al. First evaluation of proton irradiation effects on InAs/InP quantum dash laser diodes emitting at 1.55 µm. IEEE Trans Nucl Sci, 2008, 55: 2243–2247 Gajanana D, van Beuzekom M, Smit M, et al. Irradiation tests on InP based Mach Zehnder modulator. J Inst, 2013, 8: C02025 Huang H C, Dadap J I, Malladi G, et al. Helium-ion-induced radiation damage in LiNbO3 thin-film electro-optic modulators. Opt Express, 2014, 22: 19653–19661 Chen Y, Ye Z, Wu Y, et al. Nonlinear Cherenkov radiations modulated by mode dispersion in a Ti in-diffused LiNbO3 planar waveguide. Opt Express, 2018, 26: 2006–2012 Girard S, Baggio J, Bisutti J. 14-MeV neutron, 7-ray, and pulsed X-ray radiation-induced effects on multimode silica-based optical fibers. IEEE Trans Nucl Sci, 2006, 53: 3750–3757 Girard S, Kuhnhenn J, Gusarov A, et al. Radiation effects on silica-based optical fibers: recent advances and future challenges. IEEE Trans Nucl Sci, 2013, 60: 2015–2036 Nasr-Storey S, Boeuf F, Baudot C, et al. Effect of radiation on a Mach-Zehnder interferometer silicon modulator for HL-LHC data transmission applications. IEEE Trans Nucl Sci, 2015, 62: 329–335 Hoffman G B, Gehl M, Martinez N J, et al. The effect of Gamma radiation exposure on active silicon photonic device performance metrics. IEEE Trans Nucl Sci, 2019, 66: 801–809 Xapsos M A, O’Neill P M, O’Brien T P. Near-Earth space radiation models. IEEE Trans Nucl Sci, 2013, 60: 1691–1705 Barth J L, Dyer C S, Stassinopoulos E G. Space, atmospheric, and terrestrial radiation environments. IEEE Trans Nucl Sci, 2003, 50: 466–482 Duzellier S. Radiation effects on electronic devices in space. Aerospace Sci Tech, 2005, 9: 93–99 Hands A D P, Ryden K A, Meredith N P, et al. Radiation effects on satellites during extreme space weather events. Space Weather, 2018, 16: 1216–1226 Dodds N A, Schwank J R, Shaneyfelt M R, et al. Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam. IEEE Trans Nucl Sci, 2014, 61: 2904–2914 Garrett H B, Jun I. First adiabatic invariants and phase space densities for the jovian electron and proton radiation Belts-Galileo and GIRE3 estimates. JGR Space Phys, 2021, 126: e28593 Morris G K. Streamlining the electronic component derating process: an electrical engineering perspective. In: Proceedings of Annual Reliability and Maintainability Symposium, 2018 Garrett H, Jun I, Evans R, et al. The latest Jovian-trapped Proton and heavy ion models. IEEE Trans Nucl Sci, 2017, 64: 2802–2813 Ding L, Gerardin S, Bagatin M, et al. Investigation of total ionizing dose effect and displacement damage in 65 nm CMOS transistors exposed to 3 MeV protons. Nucl Instruments Methods Phys Res Sect A, 2015, 796: 104–107 Srour J R, Marshall C J, Marshall P W. Review of displacement damage effects in silicon devices. IEEE Trans Nucl Sci, 2003, 50: 653–670 Paillet P, Schwank J R, Shaneyfelt M R, et al. Comparison of charge yield in MOS devices for different radiation sources. IEEE Trans Nucl Sci, 2002, 49: 2656–2661 Ziegler J F, Ziegler M D, Biersack J P. SRIM—The stopping and range of ions in matter (2010). Nucl Instrum Methods Phys Res Sect B, 2010, 268: 1818–1823 Thomson D J, Gardes F Y, Hu Y, et al. High contrast 40 Gbit/s optical modulation in silicon. Opt Express, 2011, 19: 11507
Thông tin
Thông tin xuất bản

Springer Science and Business Media LLC

Tập 65

1-12

Thông tin tác giả