Study of C–V characteristics in thin n+-p-p+ silicon solar cells and induced junction n-p-p+ cell structures

Solar Energy Materials and Solar Cells - Tập 94 - Trang 1469-1472 - 2010
Sanjai Kumar1, Vikash Sareen1, Neha Batra2, P.K. Singh1
1National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
2National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi - 110012, India

Tài liệu tham khảo

Millman, 1972 Sze, 2006 Kumar, 2000, Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cell used in space application, Solar Energy Materials and Solar Cells, 60, 155, 10.1016/S0927-0248(99)00080-X Sharma, 1992, Determination of solar cell diffusion capacitance and its dependence on temperature and 1MeV electron fluence level, Solar Energy Materials and Solar Cells, 26, 169, 10.1016/0927-0248(92)90058-W Sanjai Kumar, 2007, Application of an impedance spectroscopy technique to study silicon solar cells and induced n+-p-p+ junction structures, Journal of Optoelectronics and Advanced Materials, 9, 371 〈www.scribner.com/zplot-lab-for-windows-software-downloads.html〉, NC, USA. Sanjai Kumar, 2009, Study of silicon solar cell at different intensities of illumination and wavelengths using impedance spectroscopy, Solar Energy Material and Solar Cells, 93, 1881, 10.1016/j.solmat.2009.07.002 Sero, 2008, Recombination rates in hetero-junction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination, Solar Energy Materials and Solar Cells, 92, 505, 10.1016/j.solmat.2007.11.005 Sanjai Kumar, P.K. Singh, G.S. Chilana, S.R. Dhariwal, Generation and recombination lifetime measurement in silicon wafers using impedance spectroscopy, Semiconductor Science and Technology 24 (2009) 095001(8pp.)