Gate-Induced Metal–Insulator Transition in MoS2 by Solid Superionic Conductor LaF3

Nano Letters - Tập 18 Số 4 - Trang 2387-2392 - 2018
Chun-Lan Wu1, Hongtao Yuan1,2,3, Yanbin Li1, Yongji Gong1,4, Harold Y. Hwang5,3, Yi Cui1,3
1Department of Material Science and Engineering, Stanford University, Stanford, California 94305, United States
2National Laboratory of Solid-State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
3Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
4School of Material Science and Engineering, Beihang University, Beijing 100191, China
5Department of Applied Physics, Stanford University, Stanford, California 94305, United States

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10.1038/nphoton.2012.285

10.1063/1.4961990

10.1021/acs.nanolett.5b01610

10.1021/nl2021575

10.1038/nphys3580

10.1126/science.aab2277

10.1002/adfm.200801633

10.1021/acsnano.5b00497

10.1038/nnano.2011.78

10.1126/science.1228006

10.1038/nmat2587

10.1038/srep12534

10.1126/science.1259440

10.1038/nnano.2014.323

10.1063/1.3271029

10.1063/1.4937555

10.1038/srep34816

10.1038/s41598-017-03413-5

10.1103/PhysRevB.95.020503

10.1107/S0021889811038970

10.1016/0167-2738(80)90005-3

10.1063/1.1708875

10.1016/S0167-2738(97)00140-9

10.1021/ja108912x

10.1103/PhysRevB.85.161403

10.1002/adfm.201503131

10.1002/smll.201701039

10.1038/nnano.2015.70

10.1038/ncomms4087

10.1021/nl401916s

10.1038/ncomms3642

10.1063/1.4803920

10.1038/nmat3687