Directionally dendritic growth of metal chalcogenide crystals via mild template-free solvothermal method

Journal of Crystal Growth - Tập 283 - Trang 230-241 - 2005
Ai-Miao Qin1, Yue-Ping Fang1, Wen-Xia Zhao1, Han-Qin Liu1, Cheng-Yong Su1,2
1School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275, China
2The State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China

Tài liệu tham khảo

Hu, 1999, Acc. Chem. Res., 32, 435, 10.1021/ar9700365 Xia, 2003, Adv. Mater., 15, 353, 10.1002/adma.200390087 Whitesides, 2002, Science, 295, 2418, 10.1126/science.1070821 Chang, 2004, Crystal Growth Des., 4, 273, 10.1021/cg034146w Lehn, 1995 Phip, 1996, Angew. Chem. Int. Ed. Engl., 35, 1154, 10.1002/anie.199611541 Nittmann, 1986, Nature, 321, 663, 10.1038/321663a0 Langer, 1980, Rev. Mod. Phys., 52, 1, 10.1103/RevModPhys.52.1 Libbrecht, 1998, Phys. Rev. Lett., 81, 176, 10.1103/PhysRevLett.81.176 Karma, 1996, Phys. Rev. Lett., 77, 4050, 10.1103/PhysRevLett.77.4050 Chait, 1996, J. Crystal Growth, 167, 383, 10.1016/0022-0248(96)00252-7 Ben–Jacob, 1990, Nature, 343, 523, 10.1038/343523a0 Xiong, 2002, J. Solid State Chem., 166, 336, 10.1006/jssc.2002.9598 Hollander, 2001, J. Crystal Growth, 233, 868, 10.1016/S0022-0248(01)01602-5 Yu, 2004, Crystal Growth Des., 4, 33, 10.1021/cg0340906 Yu, 1998, Chem. Mater., 10, 2309, 10.1021/cm980181s Selvan, 1998, Chem. Commun., 351, 10.1039/a708050f Deng, 2003, Inorg .Chem., 42, 2331, 10.1021/ic025846d Zhu, 2000, Langmuir, 16, 6396, 10.1021/la991507u Higginson, 2002, J. Phys. Chem. B, 106, 9982, 10.1021/jp026232x Dong, 2003, Microelectron. Eng., 66, 46, 10.1016/S0167-9317(03)00023-6 Shao, 2003, Inorg. Chem. Commun., 6, 737, 10.1016/S1387-7003(03)00098-4 Kuno, 2003, J. Phys. Chem. B, 107, 5758, 10.1021/jp0274684 Pal, 2003, Inorg. Chem., 42, 1518, 10.1021/ic025916g Stephens, 1955, J. Phys. Chem., 59, 966, 10.1021/j150531a035 Zeng, 2001, Mater. Res. Bull., 36, 343, 10.1016/S0025-5408(01)00512-8 Chen, 2003, Inorg. Chem., 42, 3100, 10.1021/ic025848y Li, 1999, Inorg. Chem., 38, 1382, 10.1021/ic980878f He, 2002, J. Crystal Growth, 240, 389, 10.1016/S0022-0248(02)00944-2 Liu, 2004, Chem. Lett., 33, 1284, 10.1246/cl.2004.1284 Zhu, 2001, Mater. Lett., 47, 25, 10.1016/S0167-577X(00)00206-8 Dhas, 1999, Chem. Mater., 11, 806, 10.1021/cm980670s Wu, 2004, Mater. Lett., 58, 794, 10.1016/j.matlet.2003.07.014 Córdova, 2002, Langmuir, 18, 8647, 10.1021/la025711k Wang, 2003, J. Crystal Growth, 257, 384, 10.1016/S0022-0248(03)01470-2 Kuang, 2003, Adv. Mater., 15, 1747, 10.1002/adma.200304623 Ma, 2004, Crystal Growth Des., 4, 351, 10.1021/cg034174e Jun, 2001, J. Am. Chem. Soc., 123, 5150, 10.1021/ja0157595 Dong, 2004, J. Phys. Chem. B, 108, 1617, 10.1021/jp0364811 Zhang, 2004, Crystal Growth Des., 4, 355, 10.1021/cg0341555 Chen, 2005, Crystal Growth Des., 5, 347, 10.1021/cg0498599 Hong, 2000, J. Crystal Growth, 218, 19, 10.1016/S0022-0248(00)00491-7 Edwards, 1997, J. Raman Spectrsc., 28, 95, 10.1002/(SICI)1097-4555(199702)28:2/3<95::AID-JRS74>3.0.CO;2-0 Werner, 1983, Phys. Rev. B, 28, 3330, 10.1103/PhysRevB.28.3330 Nanda, 1998, Phys. Rev. B, 58, 15405, 10.1103/PhysRevB.58.15405 Smith, 2002, J. Appl. Phys., 92, 4375, 10.1063/1.1505670 Lee, 2002, J. Am. Chem. Soc., 124, 11244, 10.1021/ja026805j Nie, 2004, J. Crystal Growth, 265, 420, 10.1016/j.jcrysgro.2004.02.092 Mary, 2001, Cryst. Res. Technol., 11, 1231, 10.1002/1521-4079(200111)36:11<1231::AID-CRAT1231>3.0.CO;2-I Ge, 2004, Chem. Eur. J., 10, 3525, 10.1002/chem.200400008 Ge, 2005, Chem. Eur. J., 11, 1889, 10.1002/chem.200400633 Brotherton, 1973, J. Chem. Dalton Trans., 12, 2696, 10.1039/DT9730002696 Kima, 2004, Mater. Chem. Phys., 86, 420, 10.1016/j.matchemphys.2004.04.011 Chen, 2004, Eng. Aspects, 242, 61, 10.1016/j.colsurfa.2004.04.056 Fonrodona, 1996, Anal. Chim. Acta, 335, 291, 10.1016/S0003-2670(96)00329-7